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Effect of p-GaN layer on the properties of InGaN/GaN green light-emitting diodes

  • Wenliang Wang (a1), Zuolian Liu (a1), Shizhong Zhou (a1), Weijia Yang (a1), Yunhao Lin (a1), Haiyan Wang (a1), Zhiting Lin (a1), Huirong Qian (a1) and Guoqiang Li (a2)...


InGaN/GaN green light-emitting diodes (LEDs) have been prepared by metal-organic chemical vapor deposition with various growth temperatures for p-GaN layer. The structural and optoelectronic properties of as-grown multiple quantum wells (MQWs) and LEDs are studied in detail. It reveals that with the growth of p-GaN layer, the crystalline qualities of the as-grown n-GaN layer are improved significantly, while the optoelectronic properties of MQWs are decreased dramatically. Furthermore, the mechanisms for the effect of p-GaN growth temperature on the properties of InGaN/GaN green LEDs are proposed. It is demonstrated that the p-GaN layer grown at a suitable temperature of 950 °C shows the highest optoelectronic properties due to the fact that this suitable temperature for p-layer growth is good for the Mg doping and would not cause the fluctuation of indium in the MQWs, and eventually benefits to the effective recombination of carriers. This work provides an optimized p-GaN layer growth temperature for realizing highly efficient InGaN/GaN green LED devices.


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1.Kuen, L.K., Fong, W.K.P., Chan, P.K.L., and Surya, C.: Degradation mechanism of GaN-based LEDs with different growth parameters. MRS Proc. 1195, 207 (2010).
2.Gao, F.L., Guan, Y.F., Li, J.L., Gao, J.N., Guo, J.Q., and Li, G.Q.: Epitaxial growth and interfaces of high-quality InN films grown on nitrided sapphire substrates. J. Mater. Res. 28, 1239 (2013).
3.Yang, W.J., Wang, W.L., Lin, Y.H., Liu, Z.L., Zhou, S.Z., Qian, H.R., Gao, F.L., Zhang, S.Z., and Li, G.Q.: Deposition of nonpolar m-plane InGaN/GaN multiple quantum wells on LiGaO2(100) substrates. J. Mater. Chem. C 2, 801 (2014).
4.Wang, W.L., Liu, Z.L., Yang, W.J., Lin, Y.H., Zhou, S.Z., Qian, H.R., and Li, G.Q.: Achieve high-quality InGaN/GaN multiple quantum wells on La0.3Sr1.7AlTaO6 substrates. Mater. Lett. 128, 27 (2014).
5.Jia, C.Y., Yu, T.J., Lu, H.M., Zhong, C.T., Sun, Y.J., Tong, Y.Z., and Zhang, G.Y.: Performance improvement of GaN-based LEDs with step stage InGaN/GaN strain relief layers in GaN-based blue LEDs. Opt. Express 21(7), 8444 (2013).
6.Zhang, L., Shao, Y.L., Hao, X.P., Wu, Y.Z., Zhang, H.D., Qu, S., Chen, X.F., and Xu, X.G.: Improvement of crystal quality HVPE grown GaN on an H3PO4 etched template. CrystEngComm 13, 5001 (2011).
7.Lin, D.W., Lee, C.Y., Liu, C.Y., Han, H.V., Lan, Y.P., Lin, C.C., Chi, G.C., and Kuo, H.C.: Efficiency and droop improvement in green InGaN/GaN light-emitting diodes on GaN nanorods template with SiO2 nanomasks. Appl. Phys. Lett. 101, 233104 (2012).
8.Lee, W., Limb, J., Ryou, J.H., Yoo, D., Ewin, M.A., Korenblit, Y., and Dupuis, R.D.: Nitride-based green light-emitting diodes with various p-type layers. J. Disp. Technol. 3(2), 126 (2007).
9.Crawford, M.H.: LEDs for solid-state lighting: Performance challenges and recent advances. IEEE J. Sel. Top. Quantum Electron. 15, 1028 (2009).
10.Tansu, N., Zhao, H.P., Liu, G.Y., Li, X.H., Zhang, J., Tong, H., and Ee, Y.K.: III-nitride photonics. IEEE Photonics J. 2, 241 (2010).
11.Brown, I.H., Blood, P., Smowton, P.M., Thomson, J.D., Olaizola, S.M., Fox, A.M., Parbrook, P.J., and Chow, W.W.: Time evolution of the screening of piezoelectric fields in InGaN quantum wells. IEEE J. Quantum Electron. 42(12), 1202 (2006).
12.Zhao, H.P., Arif, R.A., Ee, Y.K., and Tansu, N.: Self-consistent analysis of strain-compensated InGaN–AlGaN quantum wells for lasers and light-emitting diodes. IEEE J. Quantum Electron. 45(1), 66 (2009).
13.Feezell, D.F., Speck, J.S., DenBaars, S.P., and Nakamura, S.: Semipolar (20-2-1) InGaN/GaN light-emitting diodes for high-efficiency solid-state lighting. J. Disp. Technol. 9(4), 190 (2013).
14.Arif, R.A., Ee, Y.K., and Tansu, N.: Polarization engineering via staggered InGaN quantum wells for radiative efficiency enhancement of light emitting diodes. Appl. Phys. Lett. 91, 091110 (2007).
15.Zhao, H.P., Liu, G.Y., Zhang, J., Poplawsky, J.D., Dierolf, V., and Tansu, N.: Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells. Opt. Express 19(S4), A991 (2011).
16.Zhang, J. and Tansu, N.: Optical gain and laser characteristics of InGaN quantum wells on ternary InGaN substrates. IEEE Photonics J. 5(2), 2600111 (2013).
17.Zhao, H.P., Liu, G.Y., Li, X.H., Huang, G.S., Poplawsky, J.D., Penn, S.T., Dierolf, V., and Tansu, N.: Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520-525 nm employing graded growth-temperature profile. Appl. Phys. Lett. 95, 061104 (2009).
18.Iveland, J., Martinelli, L., Peretti, J., Speck, J.S., and Weisbuch, C.: Direct measurement of Auger electrons emitted from a semiconductor light-emitting diode under electrical injection: Identification of the dominant mechanism for efficiency droop. Phys. Rev. Lett. 110, 177406 (2013).
19.Tan, C.K., Zhang, J., Li, X.H., Liu, G.Y., Tayo, B.O., and Tansu, N.: First-principle electronic properties of dilute-As GaNAs alloy for visible light emitters. J. Disp. Technol. 9(4), 272 (2013).
20.Arif, R.A., Zhao, H.P., and Tansu, N.: Type-II InGaN-GaNAs quantum wells for lasers applications. Appl. Phys. Lett. 92, 011104 (2008).
21.Zhao, H.P., Arif, R.A., and Tansu, N.: Self-consistent gain analysis of type-II ‘W’ InGaN–GaNAs quantum well lasers. J. Appl. Phys. 104, 043104 (2008).
22.Lee, Y.J., Chen, C.H., and Lee, C.J.: Reduction in the efficiency-droop effect of InGaN green light-emitting diodes using gradual quantum wells. IEEE Photonics Technol. Lett. 22(20), 1506 (2010).
23.Yang, Y., Cao, X.A., and Yan, C.H.: Rapid efficiency roll-off in high-quality green light-emitting diodes on freestanding GaN substrates. Appl. Phys. Lett. 94, 041117 (2009).
24.Chang, S.J., Lai, W.C., Su, Y.K., Chen, J.F., Liu, C.H., and Lia, U.H.: InGaN–GaN multiquantum-well blue and green light-emitting diodes. IEEE J. Sel. Top. Quantum Electron. 8(2), 278 (2002).
25.Ryou, J.H., Limb, J., Lee, W., Liu, J., Lochner, Z., Yoo, D., and Dupuis, R.D.: Effect of silicon doping in the quantum-well barriers on the electrical and optical properties of visible green light-emitting diodes. IEEE Photonics Technol. Lett. 20(21), 1769 (2008).
26.Daele, B.V., Tendeloo, G.V., Jacobs, K., Moerman, I., and Leys, M.R.: Formation of metallic In in InGaN/GaN multiquantum wells. Appl. Phys. Lett. 85(19), 4379 (2004).
27.Limb, J.B., Lee, W., Ryou, J.H., Yoo, D., and Dupis, R.D.: Comparison of GaN and In0.04Ga0.96N p-layers on the electrical and electroluminescence properties of green light emitting diodes. J. Electron. Mater. 36(4), 426 (2007).
28.Wang, W.L., Yang, H., and Li, G.Q.: Growth and characterization of GaN-based LED wafers on La0.3Sr1.7AlTaO6 substrates. J. Mater. Chem. C 1, 4070 (2013).
29.Wang, W.L., Lin, Y.H., Yang, W.J., Liu, Z.L., Zhou, S.Z., Qian, H.R., Gao, F.L., Wen, L., and Li, G.Q.: A new system for achieving high-quality nonpolar m-plane GaN-based light-emitting diode wafers. J. Mater. Chem. C 2, 4112 (2014).
30.Li, S.T., Jiang, F.Y., Fana, G.H., Fang, W.Q., and Wang, L.: The influence of growth mode on quality of GaN films and blue LED wafers grown by MOCVD. Phys. B 391, 169 (2007).
31.Liu, Y.J., Tsai, T.Y., Yen, C.H., Chen, L.Y., Tsai, T.H., Huang, C.C., Chen, T.Y., Hsu, C.H., and Liu, W.C.: Performance investigation of GaN-based light-emitting diodes with tiny misorientation of sapphire substrates. Opt. Express 18(3), 2729 (2010).
32.Wang, H.Y., Zhou, S.Z., Lin, Z.T., Hong, X.S., and Li, G.Q.: Enhance light emitting diode light extraction efficiency by an optimized spherical cap-shaped patterned sapphire substrate. Jpn. J. Appl. Phys. 52, 092101 (2013).
33.Lin, Y.S., Ma, K.J., Hsu, C., Feng, S.W., Cheng, Y.C., Liao, C.C., Yang, C.C., Chou, C.C., Lee, C.M., and Chyi, J.I.: Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells. Appl. Phys. Lett. 77(19), 2988 (2000).
34.Dupuis, R.D., Limb, J.B., Liu, J.P., Ryou, J.H., Horne, C., and Yoo, D.: InGaN MQW green LEDs using p-InGaN and p-InGaN/p-GaN superlattices as p-type layers. Proc. SPIE 6894, 68941D (2008).
35.Lv, W.B., Wang, L., Wang, J.X., Hao, Z.B., and Luo, Y.: InGaN/GaN multilayer quantum dots yellow-green light-emitting diode with optimized GaN barriers. Nanoscale Res. Lett. 7, 617 (2012).
36.Ju, J.W., Zhu, J.J., Kim, H.S., Lee, C.R., and Lee, I.H.: Effects of p-GaN growth temperature on a green InGaN/GaN multiple quantum well. J. Korean Phys. Soc. 50(3), 810 (2007).
37.Taniyasu, Y., Carlin, J.F., Castiglia, A., Butté, R., and Grandjean, N.: Mg doping for p-type AlInN lattice-matched to GaN. Appl. Phys. Lett. 101, 082113 (2012).
38.Yong, A.M., Soh, C.B., Zhang, X.H., Chow, S.Y., and Chua, S.J.: Investigation of V-defects formation in InGaN/GaN multiple quantum well grown on sapphire. Thin Solid Films 515, 4496 (2007).
39.Florescu, D.I., Ting, S.M., Ramer, J.C., Lee, D.S., Merai, V.N., Parkeh, A., Lu, D., Armour, E.A., and Chernyak, L.: Investigation of V-Defects and embedded inclusions in InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition on (0001) sapphire. Appl. Phys. Lett. 83(1), 33 (2003).
40.Ju, J.W., Kang, E.S., Kim, H.S., Jang, L.W., Ahn, H.K., Jeon, J.W., and Leea, I.H.: Metal-organic chemical vapor deposition growth of InGaN/GaN high power green light emitting diode: Effects of InGaN well protection and electron reservoir layer. J. Appl. Phys. 102, 053519 (2007).
41.Leem, S.J., Shin, Y.C., Kim, E.H., Kim, C.M., Lee, B.G., Moon, Y., Lee, I.H., and Kim, T.G.: Optimization of InGaN/GaN multiple quantum well layers by a two-step varied-barrier-growth temperature method. Semicond. Sci. Technol. 23, 125039 (2008).
42.Oh, M.S., Kwon, M.K., Park, I.K., Baek, S.H., Park, S.J., Lee, S.H., and Jung, J.J.: Improvement of green LED by growing p-GaN on In0.25GaN/GaN MQWs at low temperature. J. Cryst. Growth 289, 107 (2006).


Effect of p-GaN layer on the properties of InGaN/GaN green light-emitting diodes

  • Wenliang Wang (a1), Zuolian Liu (a1), Shizhong Zhou (a1), Weijia Yang (a1), Yunhao Lin (a1), Haiyan Wang (a1), Zhiting Lin (a1), Huirong Qian (a1) and Guoqiang Li (a2)...


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