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Effect of CsBr addition on the emission properties of Tm3+ ion in Ge-Ga-S glass

Published online by Cambridge University Press:  03 March 2011

Jay Hyok Song  and
Jong Heo
Jay Hyok Song
Affiliation:
Center for Information Materials, Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, Gyeongbuk 790-784, Republic of Korea
Jong Heo*
Affiliation:
Center for Information Materials, Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, Gyeongbuk 790-784, Republic of Korea
*
a) Address all correspondence to this author. e-mail: jheo@postech.ac.kr
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Abstract

Absorption and emission properties of Tm3+ in (1-x) (Ge0.25Ga0.10S0.65)-xCsBr glass (x = 0.00–0.12) were investigated. Upon 10 mol% CsBr addition, the absorption cross sections of Tm3+ decreased accompanied by a large increase in the lifetime of the Tm3+:3H4 level to 1.23 ms since Tm3+ ions were surrounded by the Br ions of [GaS3/2Br]− units. As the concentration of Tm3+ increased, the 3H4 level lifetime decreased due to cross relaxation (Tm3+:3H4,3H6→Tm3+:3F4,3F4). Temperature dependence of the 3H4 level lifetime showed that cross relaxation in Tm3+ is a phonon-assisted energy transfer process. When Tm3+ were surrounded by Br ions, cross relaxation among Tm3+ was also suppressed due to a decrease in the transition probability among Tm3+ energy levels, a decrease in phonon energy of the host glasses, as well as an increase in the number of phonons participating in the cross relaxation process. The potential of Tm3+-doped Ge-Ga-S-CsBr glasses for S-band fiber amplifiers is also discussed.

Keywords

AmorphousLuminescenceOptical properties
Type
Articles
Information
Journal of Materials Research , Volume 21 , Issue 9 , September 2006 , pp. 2323 - 2330
Copyright
Copyright © Materials Research Society 2006

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