Hostname: page-component-8448b6f56d-m8qmq Total loading time: 0 Render date: 2024-04-19T02:23:47.425Z Has data issue: false hasContentIssue false
  • English
  • Français

Effect of crystallographic orientation on phase transformations during indentation of silicon

Published online by Cambridge University Press:  31 January 2011

Y.B Gerbig ,
S.J. Stranick ,
D.J. Morris ,
M.D. Vaudin  and
R.F. Cook
Y.B Gerbig*
Affiliation:
Ceramics Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899
S.J. Stranick
Affiliation:
Surface and Microanalysis Science Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899
D.J. Morris
Affiliation:
Ceramics Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899
M.D. Vaudin
Affiliation:
Ceramics Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899
R.F. Cook
Affiliation:
Ceramics Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899
*
a) Address all correspondence to this author. e-mail: yvonne.gerbig@nist.gov
Get access

Abstract

In a statistical nanoindentation study using a spherical probe, the effect of crystallographic orientation on the phase transformation of silicon (Si) was investigated. The occurrence and the contact pressures at which events associated with phase transformation occur, for an indentation force range from 20 to 200 mN, were analyzed and compared for the orientations Si(001), Si(110), and Si(111). It was found that plastic deformation combined with phase transformation during loading was initiated at lower forces (contact pressures) for Si(110) and Si(111) than for Si(001). Also, the contact pressure at which the phase transformation occurred during unloading was strongly influenced by the crystallographic orientation, with up to 38% greater values for Si(110) and Si(111) compared to Si(001). Mapping the residual stress field around indentations by confocal Raman microscopy revealed significant differences in the stress pattern for the three orientations.

Keywords

NanoindentationPhase transformationSi
Type
Articles
Information
Journal of Materials Research , Volume 24 , Issue 3 , March 2009 , pp. 1172 - 1183
Copyright
Copyright © Materials Research Society 2009

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Mujica, A., Rubio, A., and Needs, R.J.: High-pressure phases of group-IV, III-V, and I-VI compounds. Rev. Mod. Phys. 75, 863 (2003).CrossRefGoogle Scholar
2.Domnich, V. and Gogotsi, Y.: Phase transformation in silicon under contact loading. Adv. Mater. Sci. 3, 1 (2002).Google Scholar
3.Shimomura, O., Minomura, S., Sakai, N., Asaumi, K., Tamura, K., Fukushima, J., and Endo, H.: Pressure-induced semiconductor-metal transitions in amorphous Si and Ge. Philos. Mag. 29, 547 (1974).CrossRefGoogle Scholar
4.Patten, J., Cherukuri, H., and Yan, J.: Ductile regime machining of semiconductors and ceramics, in High Pressure Surface Science and Engineering, edited by Gogotsi, Y. and Domnich, V. (IoP, Institute of Physics, Bristol, 2004), p. 542.Google Scholar
5.Kovalchenko, A., Gogotsi, Y., Domnich, V., and Erdemir, A.: Phase transformations in silicon under dry and lubricated sliding. Tribol. Trans. 45, 372 (2002).CrossRefGoogle Scholar
6.Rao, R., Bradby, J.E., and Williams, J.S.: Patterning of silicon by indentation and chemical etching. Appl. Phys. Lett. 91, 123113 (2007).CrossRefGoogle Scholar
7.Gupta, M.C. and Ruoff, A.L.: Static compression of silicon in the [100] and in the [111] directions. J. Appl. Phys. 51, 1072 (1980).CrossRefGoogle Scholar
8.Sadana, D.K., Bedell, S.W., Reznicek, A., De Souza, J.P., Fogel, K.E., and Hovel, H.J.: Strain engineering for silicon CMOS technology, in ULSI Process Integration IV, Proceedings of the International Symposium (Electrochemical Society, 2005), pp. 360–382.Google Scholar
9.Chengkuo, L.: Novel H-beam electrothermal actuators with capability of generating bi-directional static displacement. Microsyst. Technol. 12, 717 (2006).Google Scholar
10.Jain, A. and Xie, H.: An electrothermal SCS micromirror for large bi-directional 2-D scanning, in 13th International Conference on Solid-State Sensors and Actuators and Microsystems, Digest of Technical Papers, 2005, pp. 988–991.Google Scholar
11.Moore, D., Wilson, A., and Ross, R.: Simulated hail impact testing of photovoltaic panels, in Proceedings, Annual Technical Meeting (Institute of Environmental Sciences, 1978), pp. 419–430.Google Scholar
12.Letin, V.A., Nadiradze, A.B., and Novikov, L.S.: Forecasting the influence of solid microparticles on space craft solar array, European Space Agency (special publication), ESA SP, n 589, in Proceedings of the Seventh European Space Power Conference (2005), pp. 453–458.Google Scholar
13.O'Connor, B.P., Marsh, E.R., and Couey, J.A.: On the effect of crystallographic orientation on ductile material removal in silicon. Precis. Eng. 29, 124 (2005).CrossRefGoogle Scholar
14.Young, H.T., Huang, H-Y., and Yang, Y-J.: A fundamental modeling approach for nano-grinding of silicon wafers, Materials Science Forum, Vol. 505–507, PART 1, Progress on Advanced Manufacture for Micro/Nano Technology 2005, in Proceedings of the 2005 International Conference on Advanced Manufacture (2006), pp. 253–258.Google Scholar
15.Jang, J., Lance, M.J., Wen, S., Tsui, T.Y., and Pharr, G.M.: Indentation-induced phase transformations in silicon: Influences of load, rate and indenter angle on the transformation behavior. Acta Mater. 53, 1759 (2005).CrossRefGoogle Scholar
16.Ge, D., Domnich, V., and Gogotsi, Y.: High-resolution transmission-electron-microscopy study of metastable silicon phases produced by nanoindentation. J. Appl. Phys. 93, 2418 (2003).CrossRefGoogle Scholar
17.Hainsworth, S.V., Whitehead, A.J., and Page, T.F.: The nanoindentation response of silicon and related structurally similar materials, in Plastic Deformation of Ceramics, edited by Bradt, R.C., Brookes, C.A., and Routbort, J.L. (Proc. of International Engineering Foundation Conference on the Plastic Deformation of Ceramics, Snowbird, UT, 1994), p. 173.Google Scholar
18.Domnich, V., Gogotsi, Y., and Dub, S.: Effect of phase transformations on the shape of the unloading curve in the nanoindentation of silicon. Appl. Phys. Lett. 76, 2214 (2000).CrossRefGoogle Scholar
19.Jasinevicius, R.G., Duduch, J.G., and Pizani, P.S.: The influence of crystallographic orientation on the generation of multiple structural phases generation in silicon by cyclic microindentation. Mater. Lett. 62, 812 (2008).CrossRefGoogle Scholar
20.Cook, R.F.: Strength and sharp contact fracture of silicon. J. Mater. Sci. 41, 841 (2006).CrossRefGoogle Scholar
21.Weppelmann, E.R., Field, J.S., and Swain, M.V.: Observation, analysis, and simulation of the hysteresis of silicon using ultra-micro-indentation with spherical indenters. J. Mater. Res. 8, 830 (1993).CrossRefGoogle Scholar
22.Juliano, T., Domnich, V., and Gogotsi, Y.: Examining pressure-induced phase transformations in silicon by spherical indentation al study. J. Mater. Res. 19, 2099 (2004).CrossRefGoogle Scholar
23.Field, J.S. and Swain, M.V.: A simple predictive model for spherical indentation. J. Mater. Res. 8, 297 (1993).CrossRefGoogle Scholar
24.Sherman, R.: Carbon dioxide snow cleaning. Part. Sci. Technol. 25, 37 (2007).CrossRefGoogle Scholar
25.Jordan, C.E., Stranick, S.J., Cavanagh, R.R., Richter, L.J., and Chase, D.B.: Near-field scanning optical microscopy incorporating Raman scattering for vibrational mode contrast. Surf. Sci. 433–435, 48 (1999).CrossRefGoogle Scholar
26.Srikar, V.T., Swan, A.K., Selim Ünlü, M., Goldberg, B.B., and Spearing, S.M.: Micro-Raman measurement of bending stresses in micromachined silicon flexures. J. Microelectromech. Syst. 12, 779 (2003).CrossRefGoogle Scholar
27.Kailer, A., Nickel, K.G., and Gogotsi, Y.G.: Raman microspectroscopy of nanocrystalline and amorphous phases in hardness indentations. J. Raman Spectrosc. 30, 939 (1999).3.0.CO;2-C>CrossRefGoogle Scholar
28.Williams, J.S., Chen, Y., Wong-Leung, J., Kerr, A., and Swain, M.V.: Ultra-micro-indentation of silicon and compound semiconductors with spherical indenters. J. Mater. Res. 14, 2338 (1999).CrossRefGoogle Scholar
29.Bradby, J.E., Williams, J.S., Wong-Leung, J., Swain, M.V., and Munroe, P.: Mechanical transformation in silicon by micro-indentation. J. Mater. Res. 16, 1500 (2001).CrossRefGoogle Scholar
30.Saka, H., Shimatani, A., Suganuma, M., and Suprijadi, M.: Transmission electron microscopy of amorphization and phase transformation beneath indents in Si. Philos. Mag. A 82, 1971 (2002).CrossRefGoogle Scholar
31.Ge, D., Minor, A.M., Stach, E.A., and Morris, J.W. Jr: Size effects in the nanoindentation of silicon at ambient temperature. Philos. Mag. 86, 4069 (2006).CrossRefGoogle Scholar
32.Juliano, T., Gogotsi, Y., and Domnich, V.: Effect of indentation unloading conditions on phase transformation induced events in silicon. J. Mater. Res. 18, 1192 (2003).CrossRefGoogle Scholar
33.Oliver, W.C. and Pharr, G.M.: An improved technique for determining hardness and elastic modulus using load and displacement sensing indentation experiments. J. Mater. Res. 7, 1564 (1992).CrossRefGoogle Scholar
34.Kailer, A., Gogotsi, Y.G., and Nickel, K.G.: Phase transformations of silicon caused by contact loading. J. Appl. Phys. 81, 3057 (1997).CrossRefGoogle Scholar
35.Zarudi, I., Zhang, L.C., and Zou, J.: The R8-BC8 phases and crystal growth in monocrystalline silicon under microindentation with a spherical indenter. J. Mater. Res. 19, 332 (2004).CrossRefGoogle Scholar
36.Ruffell, S., Bradby, J.E., and Williams, J.S.: High pressure crystalline phase formation during nanoindentation: Amorphous versus crystalline silicon. Appl. Phys. Lett. 89, 091919 (2006).CrossRefGoogle Scholar
37.Bradby, J.E., Williams, J.S., Wong-Leung, J., and Swain, M.V.: Transmission electron microscopy observation of deformation microstructure under spherical indentation in silicon. Appl. Phys. Lett. 77, 3749 (2000).CrossRefGoogle Scholar
38.Domnich, V., Gogotsi, Y., and Trenary, M.: Identification of pressure-induced transformations using nanoindentation, in Fundamentals of Nanoindentation and Nanotribology II, edited by Baker, S.P., Cook, R.F., Corcoran, S.G., and Moody, N.R. (Mater. Res. Soc. Symp. Proc. 649, Warrendale, PA, 2001), Q8.9.1.Google Scholar
39.Lin, Y-H., Chen, T-C., Yang, P-F., Jian, S-R., and Lai, Y-S.: Atomiclevel simulations of nanoindentation-induced phase transformation in mono-crystalline silicon. Appl. Surf. Sci. 254, 1415 (2007).CrossRefGoogle Scholar
40.Kim, D.E. and Oh, S.I.: Atomistic simulation of structural phase transformations in monocrystalline silicon induced by nanoindentation. Nanotechnology 17, 2259 (2006).CrossRefGoogle Scholar
41.Vodenitcharova, T. and Zhang, L.C.: A mechanics prediction of the behaviour of mono-crystalline silicon under nano-indentation. Int. J. Solids Struct. 40, 2989 (2003).CrossRefGoogle Scholar