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Donor doping of Ga in ZnO varistor grain boundary

Published online by Cambridge University Press:  03 March 2011

Tapan K. Gupta
Tapan K. Gupta
Affiliation:
Alcoa Technical Center, Alcoa Center, Pennsylvania 15069
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Abstract

The effect of Ga doping on the grain boundary properties of a ZnO varistor has been presented in this note. Within the range of doping level studied, it is shown that Ga acts as a donor at the grain boundary and behaves similar to that of Al.1 The grain boundary doping behavior of both Ga and Al, when acting as donors, can therefore be represented by the same defect model.

Type
Rapid Communications
Information
Journal of Materials Research , Volume 9 , Issue 9 , September 1994 , pp. 2213 - 2215
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

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