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Dislocation structure of low-angle grain boundaries in YBa2Cu3O7−δ/MgO films

Published online by Cambridge University Press:  31 January 2011

S. Oktyabrsky
Affiliation:
NYS Center for Advanced Technology, State University of New York at Albany, Albany, New York 12203
R. Kalyanaraman
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7916
K. Jagannadham
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7916
J. Narayan
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7916
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Abstract

Grain boundaries in laser-deposited YBa2Cu3O7−δ (YBCO)/MgO thin films have been investigated by high-resolution transmission electron microscopy. The films exhibit perfect texturing with YBCO(001)/MgO(001) giving rise to low-angle [001] tilt grain boundaries resulting from the grains with the c axis normal to the substrate surface and with misorientation in the a-b plane. The atomic structure of the grain boundaries was analyzed by using a dislocation model. Low-angle grain boundaries have been found to be aligned along (100) and (110) interface planes. For the (110) boundary plane, the low-energy dislocation configuration was found to consist of an array of alternating [100] and [010] dislocations. We have calculated the energy of various configurations and shown that the energy of the (110) boundary with dissociated dislocations is comparable to that of the (100) boundary, which explains the coexistence of (100) and (110) interface facets along the boundary. We have also modeled critical current transport through grain boundaries with various structures and found that the low-energy (110) grain boundary with dissociated dislocation array is expected to transport a lower superconducting current (by 25% for 6° misorientation) than (100) boundaries.

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Articles
Copyright
Copyright © Materials Research Society 1999

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