Hostname: page-component-77c89778f8-swr86 Total loading time: 0 Render date: 2024-07-19T13:47:54.755Z Has data issue: false hasContentIssue false
  • English
  • Français

Dielectric properties of plasma-spray-deposited BaTiO3 and Ba0.68Sr0.32TiO3 thick films

Published online by Cambridge University Press:  31 January 2011

K. Ahn ,
B. W. Wessels  and
S. Sampath
K. Ahn
Affiliation:
Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208
B. W. Wessels
Affiliation:
Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208
S. Sampath
Affiliation:
Department of Materials Science and Engineering, State University of New York (SUNY)-Stony Brook, Stony Brook, New York 11794
Get access

Abstract

The dielectric properties of high-k dielectric BaTiO3 and Ba0.68Sr0.32TiO3 thick films deposited on alumina substrates using a plasma-spray process were investigated. The as-deposited films were predominantly crystalline but contained an amorphous second phase, the amount of which depended on spray conditions. The effect of the spray conditions on crystallinity was studied and related to the dielectric properties of the films. The presence of a low dielectric constant interfacial layer in plasma-spray-deposited films was determined from the dependence of the dielectric constant on film thickness. After annealing at 500 °C for 20 h in air, the crystallinity and dielectric constant increased. Annealing was also found to affect the interfacial layer properties.

Type
Articles
Information
Journal of Materials Research , Volume 18 , Issue 5 , May 2003 , pp. 1227 - 1231
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Church, K.H., Fore, C., and Feeley, T., in Materials Development for Direct Write Technologies, edited by Chrisey, D.B., Camota, D.R., Helvajian, H., and Taylor, D.P. (Mater. Res. Soc. Symp. Proc. 624, Warrendale, PA, 2000), p. 32.Google Scholar
2.Young, E.J., Mateeva, E., Moore, J.J., Mishra, B., Loch, M., Thin Solid Films 377–378, 788 (2000).CrossRefGoogle Scholar
3.Sampath, S., Herman, H., Patel, A., Gambino, R., Greenlaw, R., and Tormey, E., in Materials Development for Direct Write Technologies, edited by Chrisey, D.B., Camota, D.R., Helvajian, H., and Taylor, D.P. (Mater. Res. Soc. Symp. Proc. 624, Warrendale, PA, 2000), p. 181.Google Scholar
4.Ctibor, P. and Sedlacek, J., J. Eur. Ceram. Soc. 21, 1685 (2001).CrossRefGoogle Scholar
5.Dent, A.H., Patel, A., Gutleber, J., Tormey, E., Sampath, S., and Herman, H., Mater. Sci. Eng. B 87, 23 (2001).CrossRefGoogle Scholar
6.Ahn, K., Wessels, B.W., Greenlaw, R., and Sampath, S., in Electroactive Polymers and Rapid Prototyping, edited by Bar-Cohen, Y., Zang, Q.M., Fukada, E., Bauer, S., Chrisey, D.B., and Danforth, S.C. (Mater. Res. Soc. Symp. Proc. 698, Warrendale, PA, 2002).Google Scholar
7.Kniepkamp, H. and Heywany, W., Z. Angew Phys. 6, 385 (1954)Google Scholar
8.Takemura, K., Sakuma, T., and Miyasaka, Y., Appl. Phys. Lett. 64, 2967 (1994).CrossRefGoogle Scholar
9.Materjicek, J. and Sampath, S., Acta Mater. 49, 1993 (2001).CrossRefGoogle Scholar
10.Desu, S.B., in Ferroelectric Thin Films, edited by Myers, E.R., Kingon, A.I. (Mater. Res. Soc. Symp. Proc. 200, Pittsburgh, PA, 1990), p. 199.Google Scholar
11.Bartuli, C., Bertamini, L., Matera, S., and Sturlese, S., Mater. Sci. Eng. A 199, 229 (1995).CrossRefGoogle Scholar
12.Kingery, W.D., Bowen, H.K., and Uhlmann, D.R., Introduction to Ceramics (John Wiley & Sons, New York, 1976), p. 947.Google Scholar
13.Shaw, T. M., Trolier-McKinstry, S., and McIntyre, P.C., Ann. Rev. Mater. Sci. 30, 263 (2000).CrossRefGoogle Scholar