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Dielectric loss of niobium-doped and undoped polycrystalline Sr2Bi4Ti5O18

Published online by Cambridge University Press:  01 April 2005

Wang-ping Lu ,
Jun Zhu ,
Hui Sun  and
Xiao-bing Chen
Wang-ping Lu
Affiliation:
College of Physics Science and Technology, Yangzhou University, Yangzhou 225002, People's Republic of China
Jun Zhu
Affiliation:
College of Physics Science and Technology, Yangzhou University, Yangzhou 225002, People's Republic of China
Hui Sun
Affiliation:
College of Physics Science and Technology, Yangzhou University, Yangzhou 225002, People's Republic of China
Xiao-bing Chen*
Affiliation:
College of Physics Science and Technology, Yangzhou University, Yangzhou 225002, People’s Republic of China; and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210008, People's Republic of China
*
a) Address all correspondence to this author. e-mail address: xbchen@yzu.edu.cn
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Abstract

Ferroelectric and dielectric properties of niobium-doped Sr2Bi4Ti5O18 ceramics were investigated. Compared with the undoped ceramics, the niobium-doped ceramics exhibited obviously increased remnant polarization 2Pr, which is similar to the case of vanadium doping. However, the mechanisms of increasing of 2Pr by vanadium and niobium doping are quite different. In the case of Nb-doping, one relaxation peak P1 is found on the dielectric loss curves D(T) at 70 °C. The dependence of the peak on various annealing atmosphere indicates that the relaxation mechanism of the peak is related to oxygen vacancies. With niobium doping, the P1 peak declines gradually. These results suggest that the substitution of Ti4+ by a small amount of Nb5+ can result in the decreasing of the concentration of oxygen vacancies. Thus, the increase in 2Pr of Nb-doped Sr2Bi4Ti5O18 could be attributed to the significant weakening of defect pinning.

Keywords

Dielectric propertiesFerroelectricityPolycrystal
Type
Research Article
Information
Journal of Materials Research , Volume 20 , Issue 4 , April 2005 , pp. 971 - 974
Copyright
Copyright © Materials Research Society 2005

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References

REFERENCES

1. Postnikov, V.S., Pavlov, V.S. and Turkov, S.K.: Internal friction in ferroelectrics due to interaction of domain boundaries and point defects. J. Phys. Chem. Solids 31, 1785 (1970).10.1016/0022-3697(70)90168-XCrossRefGoogle Scholar
2. Lewis, G.V., Catlow, C.R.A. and Casselton, R.E.W.: PTCR effect in BaTiO3 . J. Am. Ceram. Soc. 68, 555 (1985).CrossRefGoogle Scholar
3. Joshi, P.C. and Krupanidhi, S.B.: Switching, fatigue, and retention in ferroelectric Bi4Ti3O12 thin films. Appl. Phys. Lett. 62, 1928 (1993).10.1063/1.109547CrossRefGoogle Scholar
4. Irie, H., Miyayama, M. and Kudo, T.: Structure dependence of ferroelectric properties of bismuth layer-structured ferroelectric single crystals. J. Appl. Phys. 90, 4089 (2001).CrossRefGoogle Scholar
5. Cummins, S.E. and Cross, L.E.: Electrical and optical properties of ferroelectric Bi4Ti3O12 single crystals. J. Appl. Phys. 39, 2268 (1968).CrossRefGoogle Scholar
6. Watanabe, T., Saiki, A., Saito, K. and Funakubo, H.: Film-thickness dependence of ferroelectric properties of c-axis-oriented epitaxial Bi4Ti3O12 thin films prepared by metalorganic chemical vapor deposition. J. Appl. Phys. 89, 3934 (2001).10.1063/1.1352566CrossRefGoogle Scholar
7. Noguchi, Y. and Miyayama, M.: Large remanent polarization of vanadium-doped Bi4Ti3O12 . Appl. Phys. Lett. 78, 1903 (2001).CrossRefGoogle Scholar
8. Noguchi, Y., Miwa, I., Goshima, Y. and Miyayama, M.: Defect control for large remnanent polarization in bismuth titanate ferroelectrics—Doping effect of higher-valent cations. Jpn. J. Appl. Phys. 39 L1259 (2000).CrossRefGoogle Scholar
9. Shannon, R.D.: Revised effective ionic radii and systematic studies of interatomic distance in halides and chalcogenides. Acta Crystallogr. A32, 751 (1976).CrossRefGoogle Scholar
10. Yao, Y.Y., Song, C.H., Bao, P., Su, D., Lu, X.M., Zhu, J.S. and Wang, Y.N.: Doping effect on the dielectric property in bismuth titanate. J. Appl. Phys. 95, 3126 (2004).CrossRefGoogle Scholar
11. Lu, W.P., Mao, X.Y. and Chen, X.B.: Dielectric loss study of oxygen vacancies and domain walls in Sr2Bi4– x /3Ti5– x V x O18 ceramics. J. Appl. Phys. 95, 1973 (2004).10.1063/1.1644044CrossRefGoogle Scholar
12. Yan, F., Wang, Y.N., Liu, J.S., Zhang, Z.G. and Chen, X.B.: Mechanical relaxation in SrBi2Ta2O9 ceramics. Appl. Phys. Lett. 74, 2794 (1999).CrossRefGoogle Scholar
13. Chen, X.B., Li, C.H., Ding, Y., Zhang, Z.F., Shen, H.M., Zhu, J.S. and Wang, Y.N.: Dielectric relaxation and internal friction related to the mobility of domain wall in PZT ferroelectrics. Phys. Status Solidi 179, 455 (2000).3.0.CO;2-D>CrossRefGoogle Scholar
14. Friessnegg, T., Aggarwal, S., Ramesh, R., Nielsen, B., Poindexter, E.H. and Keeble, D.J.: Vacancy formation in (Pb,La)(Zr,Ti)O3 capacitors with oxygen deficiency and the effect on voltage offset. Appl. Phys. Lett. 77, 127 (2000).CrossRefGoogle Scholar
15. Baudry, L.: Theoretical investigation of the influence of space charges on ferroelectric properties of PbZrTiO3 thin film capacitor. J. Appl. Phys. 86, 1096 (1999).CrossRefGoogle Scholar
16. Shulman, H.S., Damjanovic, D. and Setter, N.: Niobium doping and dielectric anomalies in bismuth titanate. J. Am. Ceram. Soc. 83, 528 (2000).CrossRefGoogle Scholar