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Diamond growth on thin Ti wafers via chemical vapor deposition

Published online by Cambridge University Press:  03 March 2011

Qijin Chen  and
Zhangda Lin
Qijin Chen*
Affiliation:
State Key Laboratory of Surface Physics, Institute of Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 100080, People's Republic of China
Zhangda Lin
Affiliation:
State Key Laboratory of Surface Physics, Institute of Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 100080, People's Republic of China
*
a)Present address: Department of Physics, The University of Chicago, 5720 South Ellis Avenue, Chicago, Illinois 60637.
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Abstract

Diamond film was synthesized on thin Ti wafers (as thin as 40 μm) via hot filament chemical vapor deposition (HFCVD). The hydrogen embrittlement of the titanium substrate and the formation of a thick TiC interlayer were suppressed. A very low pressure (133 Pa) was employed to achieve high-density rapid nucleation and thus to suppress the formation of TiC. Oxygen was added to source gases to lower the growth temperature and therefore to slow down the hydrogenation of the thin Ti substrate. The role of the very low pressure during nucleation is discussed, providing insight into the nucleation mechanism of diamond on a titanium substrate. The as-grown diamond films were characterized by scanning electron microscopy (SEM), Raman spectroscopy, and x-ray analysis.

Type
Rapid Communication
Information
Journal of Materials Research , Volume 10 , Issue 11 , November 1995 , pp. 2685 - 2688
Copyright
Copyright © Materials Research Society 1995

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References

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