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Development of preferred orientation in polycrystalline AlN thin films deposited by rf sputtering system at low temperature

Published online by Cambridge University Press:  31 January 2011

A. Rodríguez-Navarro ,
W. Otaño-Rivera ,
J. M. García-Ruiz ,
R. Messier  and
L. J. Pilione
A. Rodríguez-Navarro
Affiliation:
Instituto Andaluz de Ciencias de la Tierra-CSIC, Campus de Fuentenueva, 18002 Granada, Spain
W. Otaño-Rivera
Affiliation:
Materials Research Lab., The Pennsylvania State University, University Park, Pennsylvania 16802
J. M. García-Ruiz
Affiliation:
Instituto Andaluz de Ciencias de la Tierra-CSIC, Campus de Fuentenueva, 18002 Granada, Spain
R. Messier
Affiliation:
Materials Research Lab., The Pennsylvania State University, University Park, Pennsylvania 16802
L. J. Pilione
Affiliation:
Materials Research Lab., The Pennsylvania State University, University Park, Pennsylvania 16802
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Abstract

The development of preferred orientation in AlN thin films deposited on silica glass substrates by rf sputtering at low substrate temperature (<150 °C) has been studied. The main factors controlling the preferential orientation of the AlN thin films are the ion-bombardment energies, incidence angle of the arriving particles, and deposition rate. At low pressure, a perpendicular and highly directional energetic ion-bombardment induces an orientation of the crystallites with their c-axis perpendicular to the substrate surface. At higher pressure (>15 mTorr), a spreading in the incidence angle of the arriving particles, due to gas phase collisions, favors the formation of AlN crystal twinning. A change in the preferred orientation of the films from (0001) to (1011) for deposition rates above 1.8 Å/s is observed.

Type
Articles
Information
Journal of Materials Research , Volume 12 , Issue 7 , July 1997 , pp. 1850 - 1855
Copyright
Copyright © Materials Research Society 1997

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References

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