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Determination of the Trap State Density Differences in Hydrogenated Amorphous Silicon-Germanium Alloys

Published online by Cambridge University Press:  03 March 2011

M. Boshta ,
K. Bärner ,
R. Braunstein ,
B. Alavi  and
B. Nelson
M. Boshta
Affiliation:
IV Physics Institute, University of Göttingen, D 37077 Göttingen, Germany
K. Bärner
Affiliation:
IV Physics Institute, University of Göttingen, D 37077 Göttingen, Germany
R. Braunstein*
Affiliation:
Department of Physics and Astronomy, University of California at Los Angeles, Los Angeles, California 90095
B. Alavi
Affiliation:
Department of Physics and Astronomy, University of California at Los Angeles, Los Angeles, California 90095
B. Nelson
Affiliation:
National Renewable Energy Laboratory, Golden, Colorado 80401
*
a)Address all correspondence to this author. e-mail: braunstein@physics.ucla.edu
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Abstract

Time-resolved photo- and thermoelectric effects (TTE) were used to determine simultaneously trap levels and trap state density differences in amorphous (a-SiGe:H) samples. In particular, the trap state density differences are obtained from the decay of the ambipolar charge distribution (i.e., stage II of the TTE transients). This type of spectroscopy has been applied for the first time to a-SiGe:H samples, and indeed trap states that seem to relate to concentration fluctuations, that is, Si(Ge) and Ge(Si) clusters, are observed.

Keywords

AmorphousAlloyPhotovoltaic
Type
Articles
Information
Journal of Materials Research , Volume 20 , Issue 1 , January 2005 , pp. 48 - 53
Copyright
Copyright © Materials Research Society 2004

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References

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