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The crossover of preferred orientation in TiN film growth: A real time x-ray scattering study

Published online by Cambridge University Press:  31 January 2011

J. H. Je
Affiliation:
Exxon Corporate Research, Annandale, New Jersey 08801, and Department of Materials Science and Engineering, Pohang University of Science and Technology, Korea
D. Y. Noh
Affiliation:
Exxon Corporate Research, Annandale, New Jersey 08801, and Department of Materials Science and Engineering, Kwangju Institute of Science & Technology, Korea
H. K. Kim
Affiliation:
Department of Physics, Pusan University, Korea
K. S. Liang
Affiliation:
Exxon Corporate Research, Annandale, New Jersey 08801
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Abstract

The orientational crossover phenomena in a radio-frequency (rf) sputtering growth of TiN films were studied in a real-time synchrotron x-ray scattering experiment. Following the initial random nucleation and growth stage, the growth was dominated by the grains with the (002) planes aligned with the substrate surface. Surprisingly, at later stages, the grains with the (002) growth front tilted away from the surface by about 60° became dominant. The tilting of the growth front resulted in a faceted surface topology that was confirmed by an ex situ AFM study. Our x-ray results suggest that the crossover was driven by the competition between the surface and the strain energy

Type
Articles
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

1.Rickerby, D. S., Jones, A. M., and Bellamy, B. A., Surf. Coat. Technol. 37, 4375 (1989).CrossRefGoogle Scholar
2.Oh, U. C. and Je, J. H., J. Appl. Phys. 74, 1692 (1993).CrossRefGoogle Scholar
3.Oh, U. C., Je, J. H., and Lee, J. Y., J. Mater. Res. 10, 634 (1995).CrossRefGoogle Scholar
4.Dutta, P. K. and William, H., J. Phys. D: Appl. Phys. 3, 839 (1970).CrossRefGoogle Scholar
5.Kobayashi, M. and Doi, Y., Thin Solid Films 111, 259 (1984).Google Scholar
6.Sundgren, J-E., Thin Solid Films 128, 21 (1985).CrossRefGoogle Scholar
7.Jeong, J. I., Hong, J. H., Kang, J. S., Shin, H. J., and Lee, Y. P., J. Vac. Sci. Technol. A 9, 2618 (1991).CrossRefGoogle Scholar
8.Veprek, S., Thin Solid Films 130, 135 (1985).CrossRefGoogle Scholar
9.Busing, W. R. and Levy, H. A., Acta. Crystallogr. 22, 457 (1967).CrossRefGoogle Scholar