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Controlling electromigration to selectively form thin metal wires and metal microspheres

Published online by Cambridge University Press:  31 January 2011

Masumi Saka ,
Kei Kato ,
Hironori Tohmyoh  and
Yuxin Sun
Masumi Saka*
Affiliation:
Department of Nanomechanics, Tohoku University, Aramaki, Aoba-ku, Sendai 980-8579, Japan
Kei Kato
Affiliation:
Department of Nanomechanics, Tohoku University, Aramaki, Aoba-ku, Sendai 980-8579, Japan
Hironori Tohmyoh
Affiliation:
Department of Nanomechanics, Tohoku University, Aramaki, Aoba-ku, Sendai 980-8579, Japan
Yuxin Sun
Affiliation:
Department of Nanomechanics, Tohoku University, Aramaki, Aoba-ku, Sendai 980-8579, Japan
*
a)Address all correspondence to this author. e-mail: saka@ism.mech.tohoku.ac.jp
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Abstract

Guidelines for selecting the shape formed by metal discharged from a narrow Al line were developed. By controlling electromigration in the line, either relatively large microspheres, thin wires, or relatively small microspheres could be formed. Our starting point was a passivated polycrystalline Al line with a slit and small holes at the anode end of it. In the discussion, we describe how the temperature of a part of a wire, T*, at the moment when the part is completely discharged from the hole, affects the shape of the microstructural feature formed from the metal. High, intermediate, and low values of T* were found to correspond to the formation of large microspheres, thin wires, and small microspheres, respectively. The experimental results are explained in the discussion.

Keywords

AlElectromigrationMicrostructure
Type
Articles
Information
Journal of Materials Research , Volume 23 , Issue 11 , November 2008 , pp. 3122 - 3128
Copyright
Copyright © Materials Research Society 2008

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References

REFERENCES

1Tian, M., Wang, J., Snyder, J., Kurtz, J., Liu, Y., Schiffer, P., Mallouk, T.E., Chan, M.H.W.: Synthesis and characterization of superconducting single-crystal Sn nanowires. Appl. Phys. Lett. 83, 1620 2003CrossRefGoogle Scholar
2Motoyama, M., Fukunaka, Y., Sakka, T., Ogata, Y.H., Kikuchi, S.: Electrochemical processing of Cu and Ni nanowire arrays. J. Electroanal. Chem. 584, 84 2005Google Scholar
3Xu, X.J., Fei, G.T., Yu, W.H., Wang, X.W., Chen, L., Zhang, L.D.: Preparation and formation mechanism of ZnS semiconductor nanowires made by the electrochemical deposition method. Nanotechnology 17, 426 2006Google Scholar
4Brenner, S.S.: The growth of whiskers by the reduction of metal salts. Acta Metall. 4, 62 1956CrossRefGoogle Scholar
5Zhang, J., Qing, X., Jiang, F., Dai, Z.: A route to Ag-catalyzed growth of the semiconducting In2O3 nanowires. Chem. Phys. Lett. 371, 311 2003Google Scholar
6Fukuoka, A., Higuchi, T., Ohtake, T., Oshio, T., Kimura, J., Sakamoto, Y., Shimomura, N., Inagaki, S., Ichikawa, M.: Nanonecklaces of platinum and gold with high aspect ratios synthesized in mesoporous organosilica templates by wet hydrogen reduction. Chem. Mater. 18, 337 2006CrossRefGoogle Scholar
7Wagner, R.S., Ellis, W.C.: Vapor-liquid-solid mechanism of single crystal growth. Appl. Phys. Lett. 4, 89 1964CrossRefGoogle Scholar
8Ozaki, N., Ohno, Y., Takeda, S.: Silicon nanowhiskers grown on a hydrogen-terminated silicon {111} surface. Appl. Phys. Lett. 73, 3700 1998CrossRefGoogle Scholar
9Cui, Y., Lauhon, L.J., Gudiksen, M.S., Wang, J., Lieber, C.M.: Diameter-controlled synthesis of single-crystal silicon nanowires. Appl. Phys. Lett. 78, 2214 2001Google Scholar
10Saka, M., Ueda, R.: Formation of metallic nanowires by utilizing electromigration. J. Mater. Res. 20, 2712 2005Google Scholar
11Saka, M., Nakanishi, R.: Fabrication of Al thin wire by utilizing controlled accumulation of atoms due to electromigration. Mater. Lett. 60, 2129 2006CrossRefGoogle Scholar
12Saka, M., Yamaya, F., Tohmyoh, H.: Rapid and mass growth of stress-induced nanowhiskers on the surfaces of evaporated polycrystalline Cu films. Scr. Mater. 56, 1031 2007Google Scholar
13Settsu, N., Saka, M., Yamaya, F.: Fabrication of Cu nanowires at predetermined positions by utilizing stress migration. Strain 44, 201 2008Google Scholar
14Cao, W.D., Lu, X.P., Conrad, H.: Whisker formation and the mechanism of superplastic deformation. Acta Mater. 44, 697 1996CrossRefGoogle Scholar
15Böhm, J., Volkert, C.A., Mönig, R., Balk, T.J., Arzt, E.: Electromigration-induced damage in bamboo Al interconnect. J. Electron. Mater. 31, 45 2002Google Scholar
16Liu, S.H., Chen, C., Liu, P.C., Chou, T.: Tin whisker growth driven by electrical current. J. Appl. Phys. 95, 7742 2004CrossRefGoogle Scholar
17Sun, Y., Tohmyoh, H., Saka, M.: Fabrication of Al microspheres by utilizing electromigration. J. Nanosci. Nanotech. 8 2008 in pressGoogle Scholar
18Korhonen, M.A., Børgesen, P., Tu, K.N., Li, C-Y.: Stress evolution due to electromigration in confined metal lines. J. Appl. Phys. 73, 3790 1993CrossRefGoogle Scholar
19Huntington, H.B., Grone, A.R.: Current-induced marker motion in gold wires. J. Phys. Chem. Solids 79, 4332 1961Google Scholar
20Sasagawa, K., Hasegawa, M., Saka, M., Abé, H.: Governing parameter for electromigration damage in the polycrystalline line covered with passivation layer. J. Appl. Phys. 91, 1882 2002Google Scholar