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Conductive LaNiO3 Electrode Grown by Pulsed Laser Ablation on Si Substrate

Published online by Cambridge University Press:  31 January 2011

Li Sun ,
Tao Yu ,
Yan-Feng Chen ,
Jun Zhou  and
Nai-Ben Ming
Li Sun
Affiliation:
National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, Nanjing University, Nanjing 210093, People's Republic of China
Tao Yu
Affiliation:
National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, Nanjing University, Nanjing 210093, People's Republic of China
Yan-Feng Chen
Affiliation:
National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, People's Republic of China
Jun Zhou
Affiliation:
Department of Electronic Science and Engineering, Nanjing University, Nanjing 210093, People's Republic of China
Nai-Ben Ming
Affiliation:
National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, People's Republic of China
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Abstract

Using the pulsed laser ablation (PLA) technique, conductive LaNiO3 thin films have been successfully grown on (001) Si substrates. The XRD θ-2θ scan patterns indicate a preferential (110) orientation, and the electron probe microanalyzer (EPMA) investigations show that the three elements La, Ni, and O distribute uniformly in the films. The resistivity of the as-deposited LaNiO3 films display a metallic character. Polycrystalline PbTiO3films are deposited by metalorganic chemical vapor deposition (MOCVD) on these LaNiO3 electrodes. Ferroelectricity measurements of the PbTiO3/LaNiO3 heterostructure prove LaNiO3 to be a promising electrode material in the integration of ferroelectrics and Si wafer.

Type
Articles
Information
Journal of Materials Research , Volume 12 , Issue 4 , April 1997 , pp. 931 - 935
Copyright
Copyright © Materials Research Society 1997

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