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Compound formation and kinetics in Al–Pd2Si reactions

Published online by Cambridge University Press:  31 January 2011

Joyce C. Liu  and
J. W. Mayer
Joyce C. Liu
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853
J. W. Mayer
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853
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Abstract

Lateral diffusion couples containing Al islands on Pd–Si multiple layers are used to study Al–Pd2Si reactions. The Pd2Si phase was first formed in the Pd–Si multiple-layer region after furnace annealing at 225 °C. Then, the Al–Pd2Si lateral couples were in situ annealed in a transmission electron microscope at temperatures ranging from 377–438 °C. The laterally growing region is composed of the Al3Pd2 compound and Si precipitates, as identified by selected area diffraction (SAD). During the in situ anneals, transmission electron microscopy (TEM) images were recorded by a video cassette recorder allowing thereafter a kinetic study. The lateral growth is parabolically dependent on the annealing time. An activation energy of 1.7 eV is found for this diffusion process.

Type
Articles
Information
Journal of Materials Research , Volume 4 , Issue 2 , April 1989 , pp. 336 - 342
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

1Hosack, H.H., J. Appl. Phys. 44, 3476 (1973).CrossRefGoogle Scholar
2Koster, U., Ho, P.S., and Lewis, J. E., J. Appl. Phys. 53, 7436 (1982).CrossRefGoogle Scholar
3Ho, P.O., Lewis, J.E., and Koster, U., J. Appl. Phys. 53, 7445 (1982).CrossRefGoogle Scholar
4Kokelek, E. and Robinson, G. Y., Thin Solid Films 53, 135 (1978).CrossRefGoogle Scholar
5Gurp, G. J. van, Daams, J. L. C., Oostrom, A. van, Augustus, L. J. M., and Tamminga, Y., J. Appl. Phys. 50, 6915 (1979).CrossRefGoogle Scholar
6Doolittle, L. R., Nucl. Instrum. Methods B9, 344 (1985).CrossRefGoogle Scholar
7Colgan, E. G., J. Appl. Phys. 62, 2269 (1987).CrossRefGoogle Scholar
8Liu, Joyce C., Blanpain, B., and Mayer, J. W. (unpublished research).Google Scholar
9Samsonov, G. V. and Vinitiskii, I. M., Handbook of Refractory Compounds (IFI/Plenum, New York, 1980).CrossRefGoogle Scholar
10Ferro, R. and Capelli, R., Atti. Accad. Naz. Lincei, Rend. Classe Sci. Fis. Mat. Nat. 34, 659 (1963).Google Scholar
11Colgan, E. G., Ph.D. Thesis, Cornell University, 1987.Google Scholar
12Murarka, S. P., Silicides for VLSI Applications (Academic Press, New York, 1983), p. 157.Google Scholar
13McAlister, A. J., Bull, of Alloy Phase Diagrams 7, 368 (1986).CrossRefGoogle Scholar
14Bene, R.W., J. Appl. Phys. 61, 1826 (1987).CrossRefGoogle Scholar