No CrossRef data available.
Article contents
Comment on “The diffusion of antimony in heavily doped and (sic) n- and p-type silicon” [J. Mater. Res. 1, 705 (1986)]
Published online by Cambridge University Press: 31 January 2011
Abstract
R. B. Fair et al. have analyzed original data on the effect of heavy, uniform background doping with As and B on the diffusivity of Sb in Si at 1000°–1200°C. Their analysis attributed a role to “electric fields” and led to the conclusion that, for n-type background doping, Sb diffusion is dominated by double-negatively charged vacancies with no contribution from V−. For p-type backgrounds they concluded that donor-acceptor pairing alone retards the diffusion. Here it is shown (1) that electric fields do not play a role in their experiments, (2) that the contribution of V− to Sb diffusion in an n-type background is not zero but is roughly equal to that of V= for n/ni = 10, and (3) that the retardation of Sb diffusion in p-type Si is due both to donor-acceptor pairing and, principally, to the elimination of the contributions of V− and V=.
- Type
- Comments
- Information
- Copyright
- Copyright © Materials Research Society 1987