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Characteristics of copper indium diselenide nanowires embedded in porous alumina templates

Published online by Cambridge University Press:  31 January 2011

Piao Liu ,
Vijay P. Singh ,
Suresh Rajaputra ,
Sovannary Phok  and
Zhi Chen
Zhi Chen
Affiliation:
Center for Nanoscale Science and Engineering (CeNSE), Department of Electrical and Computer Engineering, University of Kentucky, Lexington, Kentucky 40506
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Abstract

Vertically aligned nanowire arrays of copper indium diselenide (CuInSe2 or CIS) of controllable diameter and length were fabricated by simultaneously electrodepositing Cu, In, and Se from an acid bath into the pores of anodized aluminum oxide (AAO) formed on top of an aluminum sheet. X-ray diffraction measurements revealed a preferential [112] orientation and the energy dispersive x-ray analysis (EDX) measurements indicated an overall composition close to stoichiometric CuInSe2. Ohmic contact to CIS was formed by depositing a 100 nm thick of gold layer on top, and thus a Schottky diode device of the Au/CIS nanowires/Al configuration was obtained. Analysis of the current–voltage characteristics of these devices yielded diode ideality factor and reverse saturate current density values slightly higher than those reported in the literature for bulk CIS/Al junctions. Capacitance–voltage measurements were performed on the diodes to get the estimates of space charge density and the junction potential.

Keywords

ElectrodepositionNanostructureSemiconducting
Type
Articles
Information
Journal of Materials Research , Volume 25 , Issue 2 , February 2010 , pp. 207 - 212
Copyright
Copyright © Materials Research Society 2010

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References

REFERENCES

1.Repins, I., Contreras, M.A., Egaas, B., DeHart, C., Scharf, J., Perkins, C.L., To, B., Noufi, R.19.9%-efficient ZnO/CdS/CuInGaSe2 solar cell with 81.2% fill factor. Prog. Photovoltaics Res. Appl. 16, 235 (2008)CrossRefGoogle Scholar
2.Beach, J.D., McCandless, B.E.Materials challenges for CdTe and CuInSe2 photovoltaics. MRS Bull. 32, (3)225 (2007)CrossRefGoogle Scholar
3.Ramanathan, K., Contreras, M.A., Perkins, C.L., Asher, S., Hasoon, F.S., Keane, J., Young, D., Romero, M., Metzger, W., Noufi, R., Ward, J., Duda, A.Properties of 19.2% efficiency ZnO/CdS/CuInGaSe2 thin-film solar solar cells. Prog. Photovoltaics Res. Appl. 11, 225 (2003)CrossRefGoogle Scholar
4.Bhattacharya, R.N.Electrodeposition of CIGS for Solar Cells. NREL Technical Report, No. NREL/TP-590-32775, October 2002 http://www1.eere.energy.gov/solar/quantum_efficiency.htmlGoogle Scholar
5.Rocket, A.R., Birkmire, R.W.CuInSe2 for photovoltaic applications. J. Appl. Phys. 70, R81 (1991)CrossRefGoogle Scholar
6.Singh, V.P., Rajaputra, S., Liu, P., Phok, S., Guduru, S.Fabrication and characterization of CdS/CIS nanowire heterojunctions.Proceedings, 33rd IEEE-Photovoltaic Specialists Conference May 11–14 2008 San Diego, CAGoogle Scholar
7.Phok, S., Rajaputra, S., Singh, V.P.Copper indium diselenide nanowire arrays by electrodeposition in porous alumina templates. Nanotechnology 18, 475601 (2007)CrossRefGoogle Scholar
8.Aguilera, A., Jayaraman, V., Sanagapalli, S., Suresh Singh, R., Jayaraman, V., Sampson, K., Singh, V.P.Porous alumina templates and nanostructured CdS for thin film solar cell applications. Sol. Energy Mater. Sol. Cells 90, 713 (2006)CrossRefGoogle Scholar
9.Singh, V.P., Rajaputra, S., Sampson, K.E.Nanostructured Materials for Solar Energy Conversion edited by T. Soga (Elsevier, B.V., Amsterdam, The Netherlands 2006)167CrossRefGoogle Scholar
10.Cui, Y., Duan, X., Hu, J., Lieber, C.M.Doping and electrical transport in silicon nanowires. J. Phys. Chem. B 104, 5213 (2000)CrossRefGoogle Scholar
11.Chu, S-Z., Wada, K., Inoue, S., Todoroki, S.Fabrication and characteristics of ordered Ni nanostructures on glass by anodization and direct current electrodeposition. Chem. Mater. 14, 4595 (2002)CrossRefGoogle Scholar
12.Srivastava, A., Singh, R.S., Sampson, K.E., Singh, V.P., Ramanujan, R.V.Templated assembly of magnetic cobalt nanowire arrays. Metall. Mater. Trans. A 38, 717 (2007)CrossRefGoogle Scholar
13.Xu, C., Li, H., Zhao, G., Li, H.Electrodeposition and magnetic properties of Ni nanowire arrays on anodic aluminum oxide/Ti/Si substrate. Appl. Surf. Sci. 253, 1399 (2006)CrossRefGoogle Scholar
14.Matsushita, H., Tojo, Y., Takizaw, T.Schottky properties of CuInSe2 single crystals grown by the horizontal Bridgman method with controlling Se vapor pressure. J. Phys. Chem. Solids 64, 1825 (2003)CrossRefGoogle Scholar
15.Raffaelle, R.P., Mantovani, J.G., Bailey, S.G., Hepp, A.F., Gordon, E.M., Haraway, R. NASA Report, TM-97-206322 (1997)Google Scholar
16.Nielsch, K., Muller, F., Li, A-P., Gosele, U.Uniform nickel deposition into ordered alumina pores by pulsed electrodeposition. Adv. Mater. 12, (8)582 (2000)3.0.CO;2-3>CrossRefGoogle Scholar
17.Shi, Y., Jin, Z., Li, C., An, H., Qiu, J.Effects of post-heat treatment on the characteristics of chalcopyrite CuInSe2 film deposited by successive ionic layer absorption and reaction method. Thin Solid Films 515, (7-8)3339 (2007)CrossRefGoogle Scholar
18.Sze, S.M.Physics of Semiconductor Devices (John Wiley & Sons, New York, NY 1981)81Google Scholar
19.Sudo, Y., Endo, S., Irie, T.Preparation and characterization of electrodeposited CuInSe2 thin films. Jpn. J. Appl. Phys. 32, 1562 (1993)CrossRefGoogle Scholar
20.Huang, C-J., Su, Y-K., Chen, K-L., Lai, M.Y.Characteristics of copper indium diselenide thin films formed on flexible substrates by electrodeposition. Jpn. J. Appl. Phys. 44, 7795 (2005)CrossRefGoogle Scholar
21.Moller, H.M.Semiconductors for Solar Cells (Artech House, Boston, MA 1993)Google Scholar
22.Sze, S.M.Physics of Semiconductor Devices (John Wiley & Sons, New York, NY 1981)1727Google Scholar