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Changes in optical transmittance and surface morphology of AlN thin films exposed to atmosphere

Published online by Cambridge University Press:  31 January 2011

Yoshihisa Watanabe ,
Yoshifumi Sakuragi ,
Yoshiki Amamoto  and
Yoshikazu Nakamura
Yoshihisa Watanabe
Affiliation:
Department of Materials Science and Engineering, National Defense Academy, 1-10-20 Hashirimizu, Yokosuka, Kanagawa 239, Japan
Yoshifumi Sakuragi
Affiliation:
Department of Materials Science and Engineering, National Defense Academy, 1-10-20 Hashirimizu, Yokosuka, Kanagawa 239, Japan
Yoshiki Amamoto
Affiliation:
Department of Materials Science and Engineering, National Defense Academy, 1-10-20 Hashirimizu, Yokosuka, Kanagawa 239, Japan
Yoshikazu Nakamura
Affiliation:
Department of Materials Science and Engineering, National Defense Academy, 1-10-20 Hashirimizu, Yokosuka, Kanagawa 239, Japan
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Abstract

Aluminum nitride (AlN) thin films have been prepared by the ion-beam assisted deposition (IBAD) method, and the influence of exposure to different atmosphere on optical transmittance and surface morphology has been studied. AlN films have been prepared with the nitrogen ion beam energy of 0.1, 0.2, or 1.5 keV. Synthesized films have been exposed to the following conditions: (i) laboratory air (RT and 40–60% RH), (ii) saturated humidity air (RT and 80–90% RH), and (iii) elevated temperature air (100 °C and 10–20% RH). Optical transmission spectrum in the wavelength region from 190 to 2200 nm has been measured by a UV-visible spectrometer every week. Surface morphology of the films has been observed with an optical microscope (OM), and phase identification has been performed by thin film x-ray diffraction (TFXRD). The optical transmittance has not changed drastically after exposure both to the laboratory air and the saturated humidity air for 60 weeks and after exposure to the elevated temperature air for 48 weeks. Observations by OM showed that round-shaped substances were formed on the film surfaces after exposure to the atmosphere, and the size of the substances on the film surface exposed to saturated humidity air is much larger than those on the surface exposed to other atmosphere. The results of TFXRD revealed that the AlN diffraction peaks have gradually decreased with exposure time, but any new phase due to reaction products has not been detected for the samples exposed to the laboratory air, the saturated humidity air, or the elevated temperature air. From the present results, it is concluded that the IBAD AlN films can be applied in low humidity air without losing high transparency up to 60 weeks, and the films prepared with 1.5 keV ion beam show better durability than the films prepared with 0.1 or 0.2 keV ion beam for exposure to the saturated humidity air.

Type
Articles
Information
Journal of Materials Research , Volume 13 , Issue 10 , October 1998 , pp. 2956 - 2961
Copyright
Copyright © Materials Research Society 1998

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