Aluminum nitride (AlN) is currently under investigation as a potential candidate for replacing aluminum oxide (Al2O3) as a substrate material for electronic circuit packaging. The requirements for such a material are that it can be metallized and joined to produce hermetic enclosures for semiconductor devices. A technique for brazing AlN using a nonactive metal braze has been investigated. The process involves the in situ decomposition of an active metal hydride. This process improves the wetting of the AlN and led to the development of strong bonding between braze and ceramic. The ceramic-braze interface was studied using scanning electron microscopy (SEM). The nature of the interfacial reactions and the reaction products have been identified using x-ray diffraction (XRD). The progress of the reaction has been followed using differential thermal analysis (DTA). The experimental results have been correlated with thermodynamic predictions of the reaction processes. In addition to joining ceramic to ceramic, braze joints of AlN to copper and to a low expansion iron-nickel lead frame alloy were made. Residual stress resulting from a mismatch of thermal expansion coefficients between AlN and copper caused cracking in the ceramic upon cooldown from the brazing temperature. No cracking occurred in the ceramic when joined to the iron-nickel alloy. The results obtained are important for the realization of AlN as a ceramic packaging material for semiconductor devices.