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Atomic transport in Xe-irradiated Ni/SiO2 bilayers

Published online by Cambridge University Press:  31 January 2011

T. Banwell  and
M-A. Nicolet
T. Banwell
Affiliation:
Bellcore, Morristown, New Jersey 07960
M-A. Nicolet
Affiliation:
California Institute of Technology, Pasadena, California 91125
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Abstract

Parametric experiments are described that characterize the process of atomic relocation in Ni/SiO2 bilayers induced by Xe irradiation. The parameters varied are the irradiation temperature (− 196 to + 500 °C) and the Xe irradiation dose (0.01−15 × 1015cm−2). Backscattering spectrometry of the irradiated samples after removal of the unreacted Ni film is the main analytical tool. A phenomenological model is given that describes the results quantitatively. It is deduced that secondary recoil implantation followed by subsequent redistribution within the cascade's lifetime produces the dominant transport mechanism responsible for incorporating Ni into the SiO2.

Type
Articles
Information
Journal of Materials Research , Volume 3 , Issue 6 , December 1988 , pp. 1072 - 1081
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

1Mayer, J. W., Tsaur, B. Y., Lau, S. S., and Hung, L. S., Nucl. Instrum. Methods 182/183, 1 (1981).Google Scholar
2Johnson, W. L., Cheng, Y. T., Rossum, M. Van, and Nicolet, M-A., Nucl. Instrum. Methods B 7/8, 657 (1985).CrossRefGoogle Scholar
3Paine, B. M. and Averback, R. S., Nucl. Instrum. Methods B 7/8, 666 (1985).CrossRefGoogle Scholar
4Sigmund, P. and Gras-Marti, A., Nucl. Instrum. Methods 182/183, 25 (1981).CrossRefGoogle Scholar
5Johnson, W. L., in Proceedings of the Second Workshop on Ion Mixing and Surface Layer Alloying, edited by Follstaedt, D. M., Aver-back, R. S. and Nicolet, M-A. (Sandia National Laboratory, Alberquerque, NM, 1986), p.32.Google Scholar
6Dienes, G. J. and Damask, A. C., J. Appl. Phys. 29, 1713 (1958).CrossRefGoogle Scholar
7Averback, R. S., Thompson, L. J. Jr , Moyle, J., and Schalit, M., J. Appl. Phys. 53, 1324 (1982).CrossRefGoogle Scholar
8Banwell, T. C., Nicolet, M-A., Averback, R. S. and Thompson, L. J., Appl. Phys. Lett. 48, 1519 (1986).Google Scholar
9Banwell, T., Liu, B. X., Golecki, I., and Nicolet, M-A., Nucl. Instrum. Methods 209/210, 125 (1983).CrossRefGoogle Scholar
10Banwell, T., Ph. D. thesis, California Institute of Technology, 1986.Google Scholar
11Winterbon, K. B., Ion Range and Energy Deposition Distributions (IFI Plenum, New York, 1975).CrossRefGoogle Scholar
12Chu, W-K., Mayer, J. W., and Nicolet, M-A., Backscattering Spectrometry (Academic, New York, 1978).CrossRefGoogle Scholar
13Banwell, T., Nicolet, M-A., Grunthaner, P. J., and Sands, T., Appl. Phys. Lett. 50, 571 (1987).CrossRefGoogle Scholar
14Nicolet, M-A. and Lau, S. S., in VLSI Elec.tronics: Microstructure Science, Vol. 6, edited by Enspruch, N. G. and Larrabee, G. B. (Academic, New York, 1983), p. 391.Google Scholar
15Ghoshtagore, R. N., J. Appl. Phys. 40, 4374 (1969).Google Scholar
16Barcz, A. J., Paine, B. M., and Nicolet, M- A., Appl. Phys. Lett. 44, 126 (1984); also A. J. Barcz and M-A. Nicolet, Appl. Phys. A 33, 167 (1984).CrossRefGoogle Scholar
17Grove, A. S., Physics and Technology of Semiconductor Devices (Wiley, New York, 1967), p. 28.Google Scholar
18Shreter, U., So, F. C. T., Paine, B. M., and Nicolet, M-A., in Ion Im-plantation and Ion Beam Processing of Materials, edited by Hubler, G. K., Holland, O. W., Clayton, C. R., and White, C. W. (North-Holland, New York, 1984), p. 31.Google Scholar
19Gratton, L. M., Miotello, A., and Tosello, C., Appl. Phys. A 36, 139 (1985).Google Scholar
20Christel, L. A., Gibbons, J. F., and Mylroie, S., Nucl. Instrum. Methods 182/183, 187 (1981).CrossRefGoogle Scholar
21Falcone, G. and Oliva, A., Appl. Phys. Lett. 42, 41 (1983).CrossRefGoogle Scholar
22Fischer, G., Carter, G., and Webb, R., Radiat. Effects 38, 41 (1978).CrossRefGoogle Scholar
23Kampen, N. G. VanStochastic Processes in Physics and Chemistry (North-Holland, New York, 1983).Google Scholar
24Widder, D. V., The Laplace Transform (Princeton U. P., Princeton, NJ, 1941).Google Scholar