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An ultra high vacuum system for thin dielectric film deposition at low temperatures
Published online by Cambridge University Press: 31 January 2011
Abstract
An ultra high vacuum system has been designed and constructed for the purpose of depositing high-quality oxide films on well-characterized crystal surfaces at low temperatures. In particular, aluminum phosphorus oxide films have been deposited on both In P and Ge surfaces for the purpose of device application. Electrical measurements of metal-oxide-semiconductor structures show much improved interfacial properties with little or no hysteresis.
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