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An ultra high vacuum system for thin dielectric film deposition at low temperatures

Published online by Cambridge University Press:  31 January 2011

R. P. H. Chang  and
G. Griffiths
R. P. H. Chang
Affiliation:
Department of Materials Science & Engineering, Northwestern University, 2145 Sheridan Road, Evanston, Illinois, 60208
G. Griffiths
Affiliation:
CSIRO Division of Radio Physics, P. O. Box 76, Epping, NSW 2121, Australia
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Abstract

An ultra high vacuum system has been designed and constructed for the purpose of depositing high-quality oxide films on well-characterized crystal surfaces at low temperatures. In particular, aluminum phosphorus oxide films have been deposited on both In P and Ge surfaces for the purpose of device application. Electrical measurements of metal-oxide-semiconductor structures show much improved interfacial properties with little or no hysteresis.

Type
Articles
Information
Journal of Materials Research , Volume 3 , Issue 5 , October 1988 , pp. 951 - 957
Copyright
Copyright © Materials Research Society 1988

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References

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