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Amorphization of elemental and compound semiconductors upon ion implantation

Published online by Cambridge University Press:  31 January 2011

K.S. Jones  and
C.J. Santana
K.S. Jones
Affiliation:
214 Rhines Hall, Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611
C.J. Santana
Affiliation:
214 Rhines Hall, Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611
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Abstract

Cross-sectional TEM studies of ion implantation induced amorphization in a large number of semiconductors have been performed. Samples of Si, AlAs, GaAs, GaP, GaSb, InP, InAs, and ZnSe were simultaneously implanted at 77 K with 20 keV Si+ at doses between 1 × 1014/cm2 and 1 × 1016/cm2. A dose of 1 × 1015/cm2 minimized the ion beam induced epitaxial crystallization and sputtering effects. The depth of the amorphous layer at this dose was compared with Monte Carlo damage density distribution calculations (TRIM'90). The threshold damage density (TDD) necessary for amorphization was determined for each compound. The values of the threshold damage density vary from as low as 2.4 × 1019 keV/cm3 for InAs up to 7.3 × 1020 keV/cm3 for AlAs. ZnSe never became amorphous and GaSb exhibited an unusual disordering after the highest dose. The values of the threshold damage density for the various compositions were compared with known thermochemical data and several bond energy estimates. No single calculation explained all of the trends observed.

Type
Articles
Information
Journal of Materials Research , Volume 6 , Issue 5 , May 1991 , pp. 1048 - 1054
Copyright
Copyright © Materials Research Society 1991

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