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Ambient dependence of the interactions in Pt/Ni/Cu and Au/Ni/Cu structures

Published online by Cambridge University Press:  31 January 2011

Chin-An Chang
Chin-An Chang
Affiliation:
IBM T. J. Watson Research Center, Yorktown Heights, New York 10598
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Abstract

The interactions of the Pt/Ni/Cu and Au/Ni/Cu structures and their ambient dependence are studied. Comparison of the Pt–Cu interdiffusion with that of Au–Cu across the Ni layer shows an interesting relation between the interactions and their ambient dependence. According to the surface potential model, which has been shown to correlate the ambient effects for many systems, diffusion of both Pt and Au into the Cu layer via the Ni layer should be enhanced by oxygen. This is observed for Au but not for Pt. On the other hand, the anticipated oxygen-enhanced diffusion of Cu into Pt and Au layers via the Ni layer is observed in both structures. The difference between the Pt and Au diffusion via Ni is attributed to the presence of competing interdiffusion between Pt and Ni in the Pt/Ni/Cu structure, which is reduced by oxygen, whereas little diffusion of Ni into the Au layer is observed for the Au/Ni/Cu structure. The ambient effects on the trilayer structures are compared with those on the binary Au/Ni, Au/Cu, Ni/Cu, Pt/Ni, and Pt/Cu structures. The diffusion mechanisms are discussed, and relations among various systems are suggested.

Type
Articles
Information
Journal of Materials Research , Volume 2 , Issue 4 , August 1987 , pp. 441 - 445
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

1See, for example, Thin Film Interface and Interactions, edited by Baglin, J. E. E. and Poate, J. M. (Electrochemical Society, Pennington, NJ, 1980); Thin Films, Interdiffusion and Reactions, edited by J. M. Poate, K. N. Tu, and J. W. Mayer (Wiley, New York, 1978); Thin Films and Interfaces II, edited by J. E. E. Baglin, D. R. Campbell, andW.K.Chu (Materials Research Society, Pittsburgh, PA, 1984), Vol. 25.Google Scholar
2Ting, C. Y. and Wittmer, M., Thin Solid Films 96, 327 (1982); M-A. Nicolet and M. Bartur, J. Vac. Sci. Technol. 19, 186 (1981); H. P. Kattelus, E. Kolawa, K. Affolter, and M-A. Nicolet, J. Vac. Sci. Technol. A3, 2246 (1985).CrossRefGoogle Scholar
3Chang, C-A., Appl. Phys. Lett. 44, 310 (1984).CrossRefGoogle Scholar
4Chang, C-A., J. Appl. Phys. 60, 1220 (1986).CrossRefGoogle Scholar
5Song, J-S. and Chang, C-A., Appl. Phys. Lett. 50, 422 (1987).CrossRefGoogle Scholar
6Tompkins, H. G. and Pinnel, M. R., J. Appl. Phys. 47, 3804 (1976).CrossRefGoogle Scholar
7Baglin, J. E. E. and Poate, J. M., in Thin Films-Interdijfusion and Reactions, edited by Poate, J. M, Tu, K. N., and Mayer, J. W. (Wiley, New York, 1978), p. 407.Google Scholar
8Poate, J. M., Turner, P. A., DeBonta, W. J., and Yahalom, J., J. Appl. Phys. 46, 4275 (1975).CrossRefGoogle Scholar
9Ottaviani, G., J. Vac. Sci. Technol. 16, 1112 (1979).CrossRefGoogle Scholar
10Chang, C-A., J. Electrochem. Soc. 127, 1331 (1980); Appl. Phys. Lett. 38, 860 (1981); Mater. Res. Soc. Symp. Proc. 25, 111 (1984).CrossRefGoogle Scholar
11Chang, C-A., in Diffusion Phenomena in Thin Films, edited by Gupta, D. and Ho, P. S. (Noyes, Park Ridge, NJ, 1987) (in press).Google Scholar
12See, for example, Ref. 7.Google Scholar
13Hwang, J. C. M., Ho, P. S., and Ballufi, R. W., Appl. Phys. Lett. 33, 458 (1978).CrossRefGoogle Scholar
14Somorjai, G. A., Principle Surface Chemistry (Prentice-Hall, Engle-wood Cliffs, New Jersey, 1972).CrossRefGoogle Scholar
15Pauling, L., The Nature of the Chemical Bond (Cornell, New York, 1960), 3rd ed.Google Scholar
16Reference 14, p. 249.Google Scholar
17Chang, C-A., J. Appl. Phys. 53, 7088 (1982).CrossRefGoogle Scholar
18Chang, C-A. and Chu, W. K., Appl. Phys. Lett. 37, 161 (1980).CrossRefGoogle Scholar
19Chang, C-A. and Chu, W. K., J. Appl. Phys. 52, 512 (1981).CrossRefGoogle Scholar
20Chang, C-A., J. Appl. Phys. 52, 4620 (1981).CrossRefGoogle Scholar
21Chang, C-A., J. Appl. Phys. 53, 7092 (1982).CrossRefGoogle Scholar