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Achieve p-type conduction in N-doped and (Al,N)-codoped ZnO thin films by oxidative annealing zinc nitride precursors

Published online by Cambridge University Press:  31 January 2011

Z.W. Liu ,
S.W. Yeo  and
C.K. Ong
Z.W. Liu*
Affiliation:
Center for Superconducting and Magnetic Materials, Department of Physics, National University of Singapore, Singapore 117542, Singapore
S.W. Yeo
Affiliation:
Center for Superconducting and Magnetic Materials, Department of Physics, National University of Singapore, Singapore 117542, Singapore
C.K. Ong
Affiliation:
Center for Superconducting and Magnetic Materials, Department of Physics, National University of Singapore, Singapore 117542, Singapore
*
a)Address all correspondence to this author. e-mail: zwliu@ntu.edu.sg, zliu00@hotmail.com
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Abstract

N-doped and (Al,N)-codoped ZnO films were synthesized by oxidative annealing of (Zn + Zn3N2) films, which were fabricated by reactive magnetron sputtering. Both n- and p-type conductions were obtained in these ZnO:N and ZnO:AlN films. Optimal oxidation treatments for achieving p-type ZnO are annealing at 400–600 °C for 10–60 min, depending on the film thickness and morphology. The electric properties were found to be very sensitive to the annealing conditions and film structure. As-deposited (Zn + Zn3N2) films with and without Al addition had carrier concentrations of 1021–1022 cm−3. After conversion to ZnO, the n-type films had a carrier concentrations up to 1019 cm−3, whereas the p-type ZnO:N films had hole concentrations of 1014–1016 cm−3. (Al,N)-codoping increased the hole concentration of p-type film to 1018 cm−3 despite a decrease in Hall mobility. The photoluminescence properties of the p-type ZnO films were also investigated. The synthesis of p-type ZnO:AlN by oxidative annealing is believed to provide an alternative approach to realize p-type conduction in codoped ZnO film by using N2 as the N source.

Keywords

FilmSputteringSemiconducting
Type
Articles
Information
Journal of Materials Research , Volume 22 , Issue 10 , October 2007 , pp. 2668 - 2675
Copyright
Copyright © Materials Research Society 2007

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