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Synthesis and characterization of tungsten oxide nanorods from chemical vapor deposition-grown tungsten film by low-temperature thermal annealing

Published online by Cambridge University Press:  31 January 2011

Seongho Jeon
Affiliation:
Surface Chemistry Laboratory of Electronic Materials, Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Hyoja-dong, Nam-gu, Pohang, Kyungbuk 790-784, Korea
Kijung Yong*
Affiliation:
Surface Chemistry Laboratory of Electronic Materials, Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Hyoja-dong, Nam-gu, Pohang, Kyungbuk 790-784, Korea
*
a)Address all correspondence to this author. e-mail: kyong@postech.ac.kr
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Abstract

A simple thermal annealing was performed to prepare tungsten oxide nanorods directly from tungsten (W) film. The W film was deposited on Si(100) substrate by chemical vapor deposition (CVD) at 450 °C using W(CO)6. A high density of tungsten oxide nanorods was produced by heating of the W film at 600–700 °C. The morphology, structure, composition, and chemical binding states of the prepared nanorods were characterized by scanning electron microscopy (SEM), x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), and transmission electron microscopy (TEM) analysis. XRD and TEM results showed that the grown nanorods were single-crystalline W18O49. According to XPS analysis, the W18O49 nanorods contained ∼55.69% W6+, ∼32.28% W5+, and ∼12.03% W4+. The growth mechanism based on thermodynamics is discussed for the growth of tungsten oxide nanorods from W film.

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Articles
Copyright
Copyright © Materials Research Society 2008

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