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Surface planarity and microstructure of low temperature silicon SEG and ELO

Published online by Cambridge University Press:  31 January 2011

M.C. Arst ,
K.N. Ritz ,
S. Redkar ,
J.O. Borland ,
J. Hann  and
J.T. Chen
M.C. Arst
Affiliation:
Philips Research and Development Center, Signetics Company, 811 East Arques Avenue, Sunnyvale, California 94088–3409
K.N. Ritz
Affiliation:
Philips Research and Development Center, Signetics Company, 811 East Arques Avenue, Sunnyvale, California 94088–3409
S. Redkar
Affiliation:
Philips Research and Development Center, Signetics Company, 811 East Arques Avenue, Sunnyvale, California 94088–3409
J.O. Borland
Affiliation:
Philips Research and Development Center, Signetics Company, 811 East Arques Avenue, Sunnyvale, California 94088–3409
J. Hann
Affiliation:
Applied Materials, Inc., 3050 Bowers Avenue, Santa Clara, California 95051
J.T. Chen
Affiliation:
22409 St. Andrews Avenue, Cupertino, California 95014
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Abstract

Surface planarity and epi/SiO2 interface characteristics of selective epitaxial growth (SEG) and epitaxial lateral overgrowth (ELO), deposited at 800–950 °C/10 or 25 Torr, have been studied for micron-sized structures. SEG at 860 °C showed superior planarity and reduced ratio of facet width to epi thickness, compared to higher deposition temperatures. Data showed that epi/SiO2 interface defects are greatly reduced for structures parallel to (100) and/or by adding HCl to the source gas, compared to interfaces positioned at standard orientation (110) on a (100) substrate. The transition from SEG to ELO in view of the facet orientations will be discussed. To correlate structural with electrical data, n+/p diodes were fabricated on as-grown and polish planarized SEG. Leakage current values of approximately 100 nA/cm2 could be measured. These are comparable to similar n+/p junctions fabricated on conventional epi.

Type
Articles
Information
Journal of Materials Research , Volume 6 , Issue 4 , April 1991 , pp. 784 - 791
Copyright
Copyright © Materials Research Society 1991

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