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Structure of vapor-phase deposited Al-Ge thin films and Al-Ge intermediate layer bonding of Al-based microchannel structures
Published online by Cambridge University Press: 31 January 2011
Al-based high-aspect-ratio microscale structures (HARMS) are basic building blocks for all-Al microdevices. Bonding of Al-based HARMS is essential for device assembly. In this paper, bonding of Al-based HARMS to flat Al plates using Al-Ge thin film intermediate layers is investigated. The structure of sputter codeposited Al-Ge thin films was studied by high-resolution transmission electron microscopy as a function of the average film composition. The structure of the interface region between Al-based HARMS bonded to flat Al plates is studied by combining focused ion beam sectioning and scanning electron microscopy. An extended bonding interface region, ∼100 μm in width, is observed and suggested to result from liquidus/solidus reactions as well as diffusion of Ge in solid Al at the bonding temperature of 500 °C. The extended interface region is suggested to be beneficial to Al-Al bonding via Al-Ge intermediate layers.
- Journal of Materials Research , Volume 24 , Issue 2 , February 2009 , pp. 544 - 555
- Copyright © Materials Research Society 2009