Hostname: page-component-77c89778f8-m42fx Total loading time: 0 Render date: 2024-07-23T21:23:48.355Z Has data issue: false hasContentIssue false

Mg–Ti–spinel formation at the TiN/MgO interface by solid state reaction: Confirmation by high-resolution electron microscopy

Published online by Cambridge University Press:  31 January 2011

L. Hultman
Affiliation:
Thin Film Division, Department of Physics, Linköping University, S-581 83 Linköping, Sweden
D. Hesse
Affiliation:
Institut für Festkörperphysik und Elektronenmikroskopie, Weinberg 2, D-O-4050 Halle (Saale), Germany
W-A. Chiou
Affiliation:
Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208–3108
Get access

Abstract

Mg–Ti–spinel formation along the interface of epitaxial TiN(100) films to MgO(100) substrates has recently been investigated by transmission electron microscopy (TEM) in the diffraction-contrast mode in samples grown at substrate temperatures higher than 800 °C and in such post-annealed at 850 °C. This phenomenon has now been investigated by high resolution electron microscopy of cross-sectional samples, at an acceleration voltage of 300 kV. Emphasis is given to the TiN/spinel and the spinel/MgO interfaces with respect to their structure and morphology. The results obtained confirm the previously drawn conclusions on the atomic mechanism of the solid state reaction during the spinel-forming process: The spinel, which most likely is of the composition Mg2TiO4, forms by counterdiffusion of the cations Ti4+ and Mg2+ in the rigid oxygen frame provided by the fcc oxygen sublattice of MgO. The latter is completely taken over by the spinel lattice. This “host” character of the MgO substrate lattice for the topotaxial growth of the spinel lattice and the coherency of the solid state reaction with respect to the lattices of all the phases involved are demonstrated. Misfit dislocations at the TiN/MgO, TiN/spinel, and the spinel/MgO interfaces, as well as antiphase boundaries of the cation sublattice of the spinel phase, have also been observed.

Type
Articles
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1.Hultman, L., Barnett, S. A., Sundgren, J-E, and Greene, J. E, J. Cryst. Growth 92, 639 (1988).CrossRefGoogle Scholar
2.Sundgren, J-E., Johansson, B-O., Rocket, A., Barnett, S. A., and Greene, J. E., in Physics and Chemistry of Protective Coatings, edited by Sproul, W. D., Greene, J. E., and Thornton, J. A. (American Institute of Physics, New York, 1986), p. 95.Google Scholar
3.Hultman, L., Sundgren, J -E., and Hesse, D., J. Mater. Res. 4, 1266 (1989).CrossRefGoogle Scholar
4.Johansson, B-O., Sundgren, J-E., Greene, J.E., Rocket, A., and Barnett, S. A., J. Vac. Sci. Technol. A3, 303 (1985).CrossRefGoogle Scholar
5.Schmalzried, H., Solid State Reactions (VCH, Weinheim, 1981).Google Scholar
6.Koch, E. and Wagner, C., Z. Physik. Chem. B34, 317 (1936).CrossRefGoogle Scholar
7.Carter, R. E., J. Am. Ceram. Soc. 44, 116 (1961).CrossRefGoogle Scholar
8.Hesse, D., J. Vac. Sci. Technol. A5, 1696 (1987).CrossRefGoogle Scholar
9.Clarke, D. R., Ultramicroscopy 4, 33 (1979).CrossRefGoogle Scholar
10.Schmalzried, H., Ber. Bunsenges. Phys. Chem. 82, 273 (1978).CrossRefGoogle Scholar
11.Haasen, P., Physical Metallurgy (Cambridge University Press, Cambridge, 1978), Chap. 3.4.Google Scholar
12.Tabata, H., Ishii, E., and Okuda, H., J. Cryst. Growth 52, 956 (1981).CrossRefGoogle Scholar
13.Hesse, D. and Bethge, H., J. Cryst. Growth 52, 875 (1981).CrossRefGoogle Scholar