Hostname: page-component-7479d7b7d-8zxtt Total loading time: 0 Render date: 2024-07-12T18:10:21.676Z Has data issue: false hasContentIssue false
  • English
  • Français

A mechanism of CVD diamond film growth deduced from the sequential deposition from sputtered carbon and atomic hydrogen

Published online by Cambridge University Press:  03 March 2011

Darin S. Olson ,
Michael A. Kelly ,
Sanjiv Kapoor  and
Stig B. Hagstrom
Darin S. Olson
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, California 94305-2205
Michael A. Kelly
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, California 94305-2205
Sanjiv Kapoor
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, California 94305-2205
Stig B. Hagstrom
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, California 94305-2205
Get access

Abstract

We describe a growth mechanism of CVD diamond films consisting of a series of surface reactions. It is derived from experimental observations of a sequential deposition process in which incident carbon flux and atomic hydrogen flux were independently varied. In this sequential process, film growth rate increased with atomic hydrogen exposure, and a saturation in the utilization of carbon was observed. These features are consistent with a surface growth process consisting of the following steps: (i) the carburization of the diamond surface, (ii) the deposition of highly disordered carbon on top of this surface, (iii) the etching of disordered carbon by atomic hydrogen, (iv) the conversion of the carburized diamond surface to diamond at growth sites by atomic hydrogen, and (v) the carburization of newly grown diamond surface. The nature of the growth sites on the diamond surface has not been determined experimentally, and the existence of the carburized surface layer has not been demonstrated experimentally. The surface growth mechanism is the only one consistent with the growth observed in conventional diamond reactors and the sequential reactor, while precluding the necessity of gas phase precursors.

Type
Articles
Information
Journal of Materials Research , Volume 9 , Issue 6 , June 1994 , pp. 1546 - 1551
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1Yarbrough, W. A. and Messier, R., Science 247, 688 (1990).CrossRefGoogle Scholar
2Angus, J. C. and Hayman, C. C., Science 241, 913 (1988).CrossRefGoogle Scholar
3Badzian, A. R. and DeVries, R. C., Mater. Res. Bull. XXIII, 385 (1988).CrossRefGoogle Scholar
4Harris, S. J. and Martin, L. R., J. Mater. Res. 5, 2313 (1990).CrossRefGoogle Scholar
5Celii, F. G. and Butler, J. E., in New Diamond Science and Technology, edited by Messier, R., Glass, J. T., Butler, J. E., and Roy, R. (Mater. Res. Soc. Symp. Int. Proc. NDST-2, Pittsburgh, PA, 1991), p. 201.Google Scholar
6Frenklach, M. and Spear, K. E., J. Mater. Res. 3, 133 (1988).Google Scholar
7Harris, S. J., Appl. Phys. Lett. 56, 2298 (1990).Google Scholar
8Tsuda, M., Nakajima, M., and Oikawa, S., J. Am. Chem. Soc. 108, 5780 (1986).CrossRefGoogle Scholar
9Ravi, K. V. and Joshi, A., Appl. Phys. Lett. 58, (3), 246 (1991).CrossRefGoogle Scholar
10Olson, D. S., Kelly, M. A., Kapoor, S., and Hagstrom, S. B., in Wide Band Gap Semiconductors, edited by Moustakas, T. D., Pankove, J. I., and Hamakawa, Y. (Mater. Res. Soc. Symp. Proc. 242, Pittsburgh, PA, 1992), p. 43.Google Scholar
11Kelly, M. A., Kapoor, S., Olson, D. S., and Hagstrom, S. B., in Wide Band Gap Semiconductors, edited by Moustakas, T. D., J. Mater. Res., Vol. 9, No. 6, Jun 1994 J.I. Pankove, and Y. Hamakawa (Mater. Res. Soc. Symp. Proc. 242, Pittsburgh, PA, 1992), p. 51.Google Scholar
12Kelly, M. A., Olson, D. S., Kapoor, S., and Hagstrom, S. B., Appl.Phys. Lett. 60 (20), 2502 (1992).CrossRefGoogle Scholar
13Olson, D. S., Kelly, M. A., Kapoor, S., and Hagstrom, S. B., in NovelForms of Carbon, edited by Renschler, C. L., Pouch, J. J., and Cox, D. M. (Mater. Res. Soc. Symp. Proc. 270, Pittsburgh, PA, 1992), p. 335.Google Scholar
14Jansen, F., Chen, I., and Machonkin, M. A., J. Appl. Phys. 66 (12), 5749 (1989).Google Scholar
15Boland, J. J. and Parsons, G. N., Science 256, 1304 (1992).CrossRefGoogle Scholar
16Piano, L. S., Ph.D. Thesis, Stanford University (1991).Google Scholar
17Chauhan, S. P., Angus, J. C., and Gardner, N. C., J. Appl. Phys. 47 (11), 4746 (1976).CrossRefGoogle Scholar