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Mechanics analysis of femtosecond laser-induced blisters produced in thermally grown oxide on Si(100)

Published online by Cambridge University Press:  31 January 2011

Joel P. McDonald ,
M.D. Thouless  and
Steven M. Yalisove
Joel P. McDonald*
Affiliation:
Applied Physics Program, University of Michigan, Ann Arbor, Michigan 48109
M.D. Thouless*
Affiliation:
Department of Mechanical Engineering, University of Michigan, Ann Arbor, Michigan 48109; and Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109
Steven M. Yalisove
Affiliation:
Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109
*
a)Address all correspondence to this author. e-mail: jpmcdona@umich.edu
b)Address all correspondence to this author. e-mail: thouless@umich.edu
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Abstract

Blister features produced by laser-induced delamination of silicon dioxide from silicon substrates were analyzed with thin-film buckling mechanics. These analyses revealed the role of the interaction between the material and the femtosecond (fs)-pulsed laser on blister formation. In particular, it was deduced that the magnitude of the compressive residual film stress within the irradiated region appeared to exceed the intrinsic residual stress obtained from wafer curvature techniques. This apparent increase in the compressive stress after fs-pulsed laser irradiation may be caused by a modification of the oxide, which resulted in a local rarefaction of the film. The results demonstrated important features of the interaction between materials and fs-pulsed laser, including the presence of subtle modification thresholds and the limited role of thermal effects.

Keywords

Thin filmLaser ablationSi
Type
Articles
Information
Journal of Materials Research , Volume 25 , Issue 6 , June 2010 , pp. 1087 - 1095
Copyright
Copyright © Materials Research Society 2010

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References

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