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The influence of substrate bias on the morphology and charge capacity of rf-sputtered iridium oxide films

Published online by Cambridge University Press:  31 January 2011

J. D. Klein ,
S. L. Clauson  and
S. F. Cogan
J. D. Klein
Affiliation:
EIC Laboratories, Norwood, Massachusetts 02062
S. L. Clauson
Affiliation:
EIC Laboratories, Norwood, Massachusetts 02062
S. F. Cogan
Affiliation:
EIC Laboratories, Norwood, Massachusetts 02062
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Abstract

Iridium oxide films deposited on Ti-alloy stimulation electrode wires by rf sputtering exhibit markedly different surface morphologies and redox capacities in response to variations in applied substrate bias potential. Films deposited with a −20 volt bias were relatively smooth and featureless whereas those sputtered with a +20 volt bias were comprised of closely packed 1 micron long platelets. Intermediate substrate biases revealed a gradual progression from the smooth surface to one sparsely populated with particles to a morphology comprised of tightly packed platelets. The electrochemical properties of the films are strongly dependent on the substrate bias employed during deposition. As the DC bias was increased from −20 volts to +20 volts the anodic and cathodic charge capacities determined by cyclic voltammetry decreased linearly from 36 to 12 mC/cm2.

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Articles
Information
Journal of Materials Research , Volume 4 , Issue 6 , December 1989 , pp. 1505 - 1510
Copyright
Copyright © Materials Research Society 1989

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References

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