Skip to main content Accessibility help
×
Home

Growth, characterization, and electrical properties of PbZr0.52Ti0.48O3 thin films on buffered silicon substrates using pulsed laser deposition

Published online by Cambridge University Press:  31 January 2011

Walter M. Gilmore
Affiliation:
NSF Center for Advanced Materials and Smart Structures, Department of Electrical Engineering, North Carolina Agricultural and Technical State University, Greensboro, North Carolina 27411
Soma Chattopadhyay
Affiliation:
NSF Center for Advanced Materials and Smart Structures, Department of Electrical Engineering, North Carolina Agricultural and Technical State University, Greensboro, North Carolina 27411
Alex Kvit
Affiliation:
North Carolina State University, Materials Science Department, Raleigh, North Carolina 27695–7916
A. K. Sharma
Affiliation:
North Carolina State University, Materials Science Department, Raleigh, North Carolina 27695–7916
C. B. Lee
Affiliation:
Department of Electrical Engineering, North Carolina Agricultural and Technical State University, 551 McNair Hall, Greensboro, North Carolina 27411
Ward J. Collis
Affiliation:
Department of Electrical Engineering, North Carolina Agricultural and Technical State University, 551 McNair Hall, Greensboro, North Carolina 27411
J. Sankar
Affiliation:
NSF Center for Advanced Materials and Smart Structures, North Carolina Agricultural and Technical State University, Greensboro, North Carolina 27411
J. Narayan
Affiliation:
North Carolina State University, Materials Science Department, Raleigh, North Carolina 27695–7916
Get access

Abstract

Epitaxial thin films of PbZr0.52Ti0.48O3 (PZT) were synthesized successfully on SrRuO3/SrTiO3/MgO/TiN/Si heterostructures by pulsed laser deposition. The films were single phase and had (001) orientation. The deposition parameters were varied to obtain the best epitaxial layer for each of the compounds. Transmission electron microscopy indicated good epitaxy for the entire heterostructure and sharp interfaces between the epilayers. Dielectric and P–E hysteresis loop measurements were carried out with evaporated Ag electrodes. The dielectric constant for the films was found to be between 400–450. The value of saturation polarization Ps was between 55–60 μC/cm2, and the coercive field Ec varied from 60–70 kV/cm. Integration of PZT films with silicon will be useful for future memory and micromechanical devices.

Type
Articles
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below.

References

1.Takayama, R. and Tomita, Y., J. Appl. Phys. 65, 1666 (1989).CrossRefGoogle Scholar
1.Udaykumar, K.R., Schuele, P., Chen, J., Krupanidhi, S., and Cross, L., J. Appl. Phys. 77, 3981 (1995).CrossRefGoogle Scholar
2.Shimada, Y., Integr. Ferroelectr. 11, 229 (1995).CrossRefGoogle Scholar
3.Kumazawa, T., Appl. Phys. Lett. 72, 608 (1998).CrossRefGoogle Scholar
4.Chang, L.H. and Anderson, W.A., Thin Solid Films 303, 94 (1997).CrossRefGoogle Scholar
5.Al-Shareef, H.N., Kingon, A.I., Chen, X., and Auciello, O., J. Mater. Res. 9, 2960 (1996).Google Scholar
6.Sadashivan, S., J. Appl. Phys. 83, 2165 (1998).CrossRefGoogle Scholar
7.Eom, C.B., Dover, R.B. Van, Phillips, J.M., Werder, D.J., Marshall, J.H., Chen, C.H., Cava, R.J., Fleming, R.M., and Fork, D.K., Appl. Phys. Lett. 63, 2570 (1993).CrossRefGoogle Scholar
8.Chattopadhyay, S., Kvit, A., Sharma, A.K., Venkatraman, S., Lee, C.B., Sankar, J., and Narayan, J., MRS Symp. Proc., Fall 1999 (in press)Google Scholar
9.Speck, J.S., Seifert, A., Pompe, W., and Ramesh, R., J. Appl. Phys. 76, 477 (1994).CrossRefGoogle Scholar
10.Haun, M.J., Furman, E., Jang, S.J., and Cross, L.E., Ferroelectrics 99, 12 (1989).Google Scholar
11.Lee, K.B., Tirumala, S., and Desu, S.B., Appl. Phys. Lett. 74, 1484 (1999).CrossRefGoogle Scholar
12.Cho, C.R., Francis, L.F., and Polla, D.L., Mater. Lett. 38, 125 (1999).CrossRefGoogle Scholar

Full text views

Full text views reflects PDF downloads, PDFs sent to Google Drive, Dropbox and Kindle and HTML full text views.

Total number of HTML views: 0
Total number of PDF views: 26 *
View data table for this chart

* Views captured on Cambridge Core between September 2016 - 17th January 2021. This data will be updated every 24 hours.

Hostname: page-component-77fc7d77f9-xbf5p Total loading time: 0.193 Render date: 2021-01-17T17:06:51.256Z Query parameters: { "hasAccess": "0", "openAccess": "0", "isLogged": "0", "lang": "en" } Feature Flags last update: Sun Jan 17 2021 16:53:20 GMT+0000 (Coordinated Universal Time) Feature Flags: { "metrics": true, "metricsAbstractViews": false, "peerReview": true, "crossMark": true, "comments": true, "relatedCommentaries": true, "subject": true, "clr": true, "languageSwitch": true, "figures": false, "newCiteModal": false, "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true }

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Growth, characterization, and electrical properties of PbZr0.52Ti0.48O3 thin films on buffered silicon substrates using pulsed laser deposition
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

Growth, characterization, and electrical properties of PbZr0.52Ti0.48O3 thin films on buffered silicon substrates using pulsed laser deposition
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

Growth, characterization, and electrical properties of PbZr0.52Ti0.48O3 thin films on buffered silicon substrates using pulsed laser deposition
Available formats
×
×

Reply to: Submit a response


Your details


Conflicting interests

Do you have any conflicting interests? *