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Ferroelectric behavior of pulsed laser deposited BaxSr1−xTiO3 thin films

Published online by Cambridge University Press:  31 January 2011

Vivek Mehrotra
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853-1501
Simon Kaplan
Affiliation:
Department of Physics, Cornell University, Ithaca, New York 14853
Albert J. Sievers
Affiliation:
Department of Physics, Cornell University, Ithaca, New York 14853
Emmanuel P. Giannelis
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853-1501
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Abstract

Ba0.75Sr0.25TiO3 thin films have been deposited on single-crystal MgO substrates by pulsed laser deposition with the objective of forming ferroelectric films with a low Curie temperature. The films have been characterized by capacitance measurements and by transmission electron microscopy, x-ray diffraction, and Rutherford backscattering spectrometry (random and channeled). Films deposited with the substrate at 500 °C are polycrystalline, while those deposited at 650 °C are highly aligned and possibly epitaxial. The films are transparent in the visible region with an optical absorption edge at about 300 nm. Capacitance measurements on the polycrystalline films reveal a Curie transition at 283 K. The lowering of Curie temperature from the corresponding bulk sample is attributed to the films being under compression, as verified by Raman spectroscopy.

Type
Rapid Communications
Copyright
Copyright © Materials Research Society 1993

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