Crossref Citations
This article has been cited by the following publications. This list is generated based on data provided by
Crossref.
Benjamin, M. C.
Wang, Cheng
Davis, R. F.
and
Nemanich, R. J.
1994.
Observation of a negative electron affinity for heteroepitaxial AlN on α(6H)-SiC(0001).
Applied Physics Letters,
Vol. 64,
Issue. 24,
p.
3288.
Davis, Robert F.
Paisley, M.J.
Sitar, Z.
Kester, D.J.
Ailey, K.S.
and
Wang, C.
1994.
Deposition of III-N thin films by molecular beam epitaxy.
Microelectronics Journal,
Vol. 25,
Issue. 8,
p.
661.
Stevens, K. S.
Ohtani, A.
Kinniburgh, M.
and
Beresford, R.
1994.
Microstructure of AlN on Si (111) grown by plasma-assisted molecular beam epitaxy.
Applied Physics Letters,
Vol. 65,
Issue. 3,
p.
321.
Stacy, T.
Liaw, B. Y.
Khan, A. H.
and
Zhao, G.
1995.
Wide Band Gap Electronic Materials.
p.
475.
Davis, Robert F.
Ailey, K. S.
Bremser, M. D.
Carlson, E.
Kern, R. S.
Kester, D. J.
Perry, W. G.
Tanaka, S.
and
Weeks, T. W.
1995.
Advances in Solid State Physics 35.
Vol. 35,
Issue. ,
p.
1.
Nakamura, Yoshikazu
Watanabe, Yoshihisa
Hirayama, Shigekazu
and
Naota, Yuusaku
1995.
Effect of ion beam energy on the synthesis of oriented aluminium nitride thin films.
Surface and Coatings Technology,
Vol. 76-77,
Issue. ,
p.
337.
Ustin, S. A.
Lauhon, L.
Brown, K. A.
Hu, D. Q.
and
Ho, W.
1995.
Single Crystal Wurtzitic Aluminum Nitride Growth on Silicon Using Supersonic Gas Jets.
MRS Proceedings,
Vol. 395,
Issue. ,
Davis, Robert F.
Tanaka, Satoru
and
Kern, R.Scott
1996.
Microstructural evolution and defect formation during the initial stages of the growth of silicon carbide and aluminum nitride on α(6H)-SiC(0001) substrates.
Journal of Crystal Growth,
Vol. 163,
Issue. 1-2,
p.
93.
Stemmer, Susanne
Pirouz, Pirouz
Ikuhara, Yuichi
and
Davis, R. F.
1996.
Film/Substrate Orientation Relationship in theAIN/6H-SiC Epitaxial System.
Physical Review Letters,
Vol. 77,
Issue. 9,
p.
1797.
Neumayer, Deborah A.
and
Ekerdt, John G.
1996.
Growth of Group III Nitrides. A Review of Precursors and Techniques.
Chemistry of Materials,
Vol. 8,
Issue. 1,
p.
9.
Lekova, M.
Auner, G. W.
Jin, F.
Naik, R.
and
Naik, V.
1996.
Growth and Characterization of AlN on 6H-SiC Substrates.
MRS Proceedings,
Vol. 449,
Issue. ,
Pierson, Hugh O.
1996.
Handbook of Refractory Carbides and Nitrides.
p.
223.
Brown, Kyle A.
Ustin, S. A.
Lauhon, L.
and
Ho, W.
1996.
Supersonic jet epitaxy of aluminum nitride on silicon (100).
Journal of Applied Physics,
Vol. 79,
Issue. 10,
p.
7667.
Pierson, Hugh O.
1996.
Handbook of Refractory Carbides and Nitrides.
p.
276.
Davis, Robert F.
Tanaka, S.
Rowland, L.B.
Kern, R.S.
Sitar, Z.
Ailey, S.K.
and
Wang, C.
1996.
Growth of SiC and III–V nitride thin films via gas-source molecular beam epitaxy and their characterization.
Journal of Crystal Growth,
Vol. 164,
Issue. 1-4,
p.
132.
Edgar, J. H.
Carosella, C. A.
Eddy, C. R.
and
Smith, D. T.
1996.
Effect of beam voltage on the properties of aluminium nitride prepared by ion beam assisted deposition.
Journal of Materials Science: Materials in Electronics,
Vol. 7,
Issue. 4,
p.
247.
Malengreau, F.
Vermeersch, M.
Hagège, S.
Sporken, R.
Lange, M. D.
and
Caudano, R.
1997.
Epitaxial growth of aluminum nitride layers on Si(111) at high temperature and for different thicknesses.
Journal of Materials Research,
Vol. 12,
Issue. 1,
p.
175.
Muhl, S
Zapien, J A
Mendez, J M
and
Andrade, E
1997.
Aluminium nitride films prepared by reactive magnetron sputtering.
Journal of Physics D: Applied Physics,
Vol. 30,
Issue. 15,
p.
2147.
Malengreau, F.
Hagège, S.
Sporken, R.
Vermeersch, M.
and
Caudano, R.
1997.
UHV reactive sputtering of AlN(0001) single crystals on Si(111) at high temperature by a two-step growth method.
Journal of the European Ceramic Society,
Vol. 17,
Issue. 15-16,
p.
1807.
Davis, R.F.
Paisley, M.J.
Sitar, Z.
Kester, D.J.
Ailey, K.S.
Linthicum, K.
Rowland, L.B.
Tanaka, S.
and
Kern, R.S.
1997.
Gas-source molecular beam epitaxy of III–V nitrides.
Journal of Crystal Growth,
Vol. 178,
Issue. 1-2,
p.
87.