Skip to main content Accessibility help
×
Home
Hostname: page-component-684bc48f8b-plp5r Total loading time: 13.266 Render date: 2021-04-14T07:58:38.986Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": false, "newCiteModal": false, "newCitedByModal": true }

Electron energy structure of self-assembled In(Ga)As nanostructures probed by capacitance-voltage spectroscopy and one-dimensional numerical simulation

Published online by Cambridge University Press:  31 January 2011

Wen Lei
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University, Canberra ACT 0200, Australia; and Department of Physics and CeNIDE, Universität Duisburg-Essen, D-47048 Duisburg, Germany
Axel Lorke
Affiliation:
Department of Physics and CeNIDE, Universität Duisburg-Essen, D-47048 Duisburg, Germany
Chennupati Jagadish
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University, Canberra ACT 0200, Australia
Andreas D. Wieck
Affiliation:
Solid State Physics, Ruhr-Universität Bochum, D-44780 Bochum, Germany
Corresponding
E-mail address:
Get access

Abstract

The electron energy structure of self-assembled In(Ga)As/GaAs nanostructures, quantum dots, and quantum rings was studied with capacitance-voltage spectroscopy and one-dimensional numerical simulation using Poisson/Schrödinger equations. The electron energy levels in the quantum dots and quantum rings with respect to the electron ground state of the wetting layer were determined directly from capacitance-voltage measurements with a linear lever arm approximation. In the regime where the linear lever arm approximation was not valid anymore (after the charging of the wetting layer), the energy difference between the electron ground state of the wetting layer and the GaAs conduction band edge was obtained indirectly from a numerical simulation of the conduction band under different gate voltages, which led to the erection of complete electron energy levels of the nanostructures in the conduction band.

Type
Outstanding Symposium Papers
Copyright
Copyright © Materials Research Society 2009

Access options

Get access to the full version of this content by using one of the access options below.

References

1Bimberg, D., Grundmann, M., and Ledentsov, N.N.: Quantum Dot Heterostructures (John Wiley & Sons, New York, 1999).Google Scholar
2Lorke, A., Luyken, R.J., Govorov, A.O., and Kotthaus, J.P.: Spectroscopy of nanoscopic semiconductor rings. Phys. Rev. Lett. 84, 2223 (2000)CrossRefGoogle ScholarPubMed
3Vukmirovi, N., Indjin, D., Jovanovi, V.D., Ikoni, Z., and Harrison, P.: Symmetry of k.p Hamiltonian in pyramidal InAs/GaAs quantum dots: Application to the calculation of electronic structure. Phys. Rev. B 72, 075356 (2005)CrossRefGoogle Scholar
4Climente, J.I., Korkusinski, M., Doty, M.F., Scheibner, M., Bracker, A.S., Goldoni, G., Gammon, D., and Hawrylak, P.: Antibonding hole ground state in artificial molecules. OAtube Nanotechnology 1, 901 (2008)Google Scholar
5Tablero, C.: Energy levels in self-assembled quantum arbitrarily shaped dots. J. Chem. Phys. 122, 064701 (2005)CrossRefGoogle ScholarPubMed
6Ren, G.B. and Rorison, J.M.: Electronic structure of In1-xGaxAs quantum dots via finite difference time domain method. Phys. Rev. B 77, 245318 (2008)CrossRefGoogle Scholar
7Voskoboynikov, O., Li, Y., Lu, H.M., Shih, C.F., and Lee, C.P.: Energy states and magnetization in nanoscale quantum rings. Phys. Rev. B 66, 155306 (2002)CrossRefGoogle Scholar
8Climente, J.I., Planelles, J., and Rajadell, F.: Energy structure and far-infrared spectroscopy of two electrons in a self-assembled quantum ring. J. Phys.: Condens. Matter 17, 1573 (2005)Google Scholar
9Yamauchi, S., Komori, K., Morohashi, I., Goshima, K., and Sugaya, T.: Electronic structures in single pair of InAs/GaAs coupled quantum dots with various interdot spacings. J. Appl. Phys. 99, 033522 (2006)CrossRefGoogle Scholar
10Chu, L., Zrenner, A., Böhm, G., and Abstreiter, G.: Lateral intersubband photocurrent spectroscopy on InAs/GaAs quantum dots. Appl. Phys. Lett. 76, 1944 (2000)CrossRefGoogle Scholar
11Engström, O. and Kaniewska, M.: Deep level transient spectroscopy in quantum dot characterization. Nanoscale Res. Lett. 3, 179 (2008)CrossRefGoogle Scholar
12Reuter, D.: Capacitance-voltage spectroscopy of InAs quantum dots, in Self-Assembled Quantum Dots, edited by Wang, Z.M. (Springer, New York, 2008).Google Scholar
13Drexler, H., Leonard, D., Hansen, W., Kotthaus, J.P., and Petroff, P.M.: Spectroscopy of quantum levels in charge-tunable InGaAs quantum dots. Phys. Rev. Lett. 73, 2252 (1994)CrossRefGoogle ScholarPubMed
14Medeiros-Ribeiro, G., Leonard, D., and Petroff, P.M.: Electron and hole energy levels in InAs self-assembled quantum dots. Appl. Phys. Lett. 66, 1767 (1995)CrossRefGoogle Scholar
15Fricke, M., Lorke, A., Kotthaus, J.P., Medeiros-Ribeiro, G., and Petroff, P.M.: Shell structure and electron-electron interaction in self-assembled InAs quantum dots. Europhys. Lett. 36, 197 (1996)CrossRefGoogle Scholar
16Bock, C., Schmidt, K.H., Kunze, U., Malzer, S., and Döhler, G.H.: Valence-band structure of self-assembled InAs quantum dots studied by capacitance spectroscopy. Appl. Phys. Lett. 82, 2071 (2003)CrossRefGoogle Scholar
17Granados, D. and Garcia, J.M.: Determination of the energy levels on InAs quantum dots with respect to the GaAs conduction band. Nanotechnology 16, s282 (2005)CrossRefGoogle Scholar
18Tarucha, S., Austing, D.G., Honda, T., van der Hage, R.J., and Kouwenhoven, L.P.: Shell filling and spin effects in a few electron quantum dot. Phys. Rev. Lett. 77, 3613 (1996)CrossRefGoogle Scholar
19Warburton, R.J., Miller, B.T., Dürr, C.S., Bödefeld, C., Karrai, K., and Kotthaus, J.P.: Coulomb interactions in small charge-tunable quantum dots: A simple model. Phys. Rev. B 58, 16221 (1998)CrossRefGoogle Scholar
20Luyken, R.J., Lorke, A., Govorov, A.O., Kotthaus, J.P., Medeiros-Ribeiro, G., and Petroff, P.M.: The dynamics of tunneling into self-assembled InAs dots. Appl. Phys. Lett. 74, 2486 (1999)CrossRefGoogle Scholar
21Snider, G.L.: Computer Program 1D Poisson/Schrödinger: A Band Diagram Calculator (http://www.nd.edu/Egsnider, University of Notre Dame, IN).Google Scholar
22Warburton, R.J., Schaflein, C., Haft, D., Bickel, F., Lorke, A., Karrai, K., Garcia, J.M., Schoenfeld, W., and Petroff, P.M.: Optical emission from a charge-tunable quantum ring. Nature 405, 926 (2000)CrossRefGoogle ScholarPubMed
23Sanguinetti, S., Abbarchi, M., Vinattieri, A., Zamfirescu, M., Gurioli, M., Mano, T., Kuroda, T., and Koguchi, N.: Carrier dynamics in individual concentric quantum rings: Photoluminescence measurements. Phys. Rev. B 77, 125404 (2008)CrossRefGoogle Scholar
24Filikhin, I., Suslov, V.M., and Vlahovic, B.: Modeling of InAs/GaAs quantum ring capacitance spectroscopy in the nonparabolic approximation. Phys. Rev. B 73, 205332 (2006)CrossRefGoogle Scholar

Full text views

Full text views reflects PDF downloads, PDFs sent to Google Drive, Dropbox and Kindle and HTML full text views.

Total number of HTML views: 0
Total number of PDF views: 19 *
View data table for this chart

* Views captured on Cambridge Core between September 2016 - 14th April 2021. This data will be updated every 24 hours.

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Electron energy structure of self-assembled In(Ga)As nanostructures probed by capacitance-voltage spectroscopy and one-dimensional numerical simulation
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

Electron energy structure of self-assembled In(Ga)As nanostructures probed by capacitance-voltage spectroscopy and one-dimensional numerical simulation
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

Electron energy structure of self-assembled In(Ga)As nanostructures probed by capacitance-voltage spectroscopy and one-dimensional numerical simulation
Available formats
×
×

Reply to: Submit a response


Your details


Conflicting interests

Do you have any conflicting interests? *