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Electron energy structure of self-assembled In(Ga)As nanostructures probed by capacitance-voltage spectroscopy and one-dimensional numerical simulation

Published online by Cambridge University Press:  31 January 2011

Wen Lei ,
Christian Notthoff ,
Matthias Offer ,
Cedrik Meier ,
Axel Lorke ,
Chennupati Jagadish  and
Andreas D. Wieck
Wen Lei*
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University, Canberra ACT 0200, Australia; and Department of Physics and CeNIDE, Universität Duisburg-Essen, D-47048 Duisburg, Germany
Axel Lorke
Affiliation:
Department of Physics and CeNIDE, Universität Duisburg-Essen, D-47048 Duisburg, Germany
Chennupati Jagadish
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University, Canberra ACT 0200, Australia
Andreas D. Wieck
Affiliation:
Solid State Physics, Ruhr-Universität Bochum, D-44780 Bochum, Germany
*
a) Address all correspondence to this author. e-mail: wen.lei@anu.edu.au
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Abstract

The electron energy structure of self-assembled In(Ga)As/GaAs nanostructures, quantum dots, and quantum rings was studied with capacitance-voltage spectroscopy and one-dimensional numerical simulation using Poisson/Schrödinger equations. The electron energy levels in the quantum dots and quantum rings with respect to the electron ground state of the wetting layer were determined directly from capacitance-voltage measurements with a linear lever arm approximation. In the regime where the linear lever arm approximation was not valid anymore (after the charging of the wetting layer), the energy difference between the electron ground state of the wetting layer and the GaAs conduction band edge was obtained indirectly from a numerical simulation of the conduction band under different gate voltages, which led to the erection of complete electron energy levels of the nanostructures in the conduction band.

Keywords

Electronic materialElectronic structureNanostructure
Type
Outstanding Symposium Papers
Information
Journal of Materials Research , Volume 24 , Issue 7 , July 2009 , pp. 2179 - 2184
Copyright
Copyright © Materials Research Society 2009

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