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Effects of mixed abrasives in chemical mechanical polishing of oxide films

Published online by Cambridge University Press:  03 March 2011

Zhenyu Lu ,
Seung-Ho Lee ,
Venkata R. K. Gorantla ,
S. V. Babu  and
Egon Matijević
Zhenyu Lu
Affiliation:
Center for Advanced Materials Processing, Clarkson University, Potsdam, New York 13699–5814
Seung-Ho Lee
Affiliation:
Center for Advanced Materials Processing, Clarkson University, Potsdam, New York 13699–5814
Venkata R. K. Gorantla
Affiliation:
Center for Advanced Materials Processing, Clarkson University, Potsdam, New York 13699–5814
S. V. Babu
Affiliation:
Center for Advanced Materials Processing, Clarkson University, Potsdam, New York 13699–5814
Egon Matijević*
Affiliation:
Center for Advanced Materials Processing, Clarkson University, Potsdam, New York 13699–5814
*
b)Address all correspondence to this author.
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Abstract

Thermal oxide covered silicon wafers were polished with slurries containing (i) only nano-sized particles of ceria, monodispersed colloidal spherical silica, or hematite of different shapes, (ii) a binary mixture of the same nano-sized and uniform colloidal particles, and (iii) the same colloids coated with nano-sized ceria. The procedures for the preparation of the coated particles are described in this article. The polish rates and surface qualities were in all cases higher with mixed slurries, and even more so with coated particles. The performance of composite systems also depended on the shape of the particles, cubic ones being the most and spheres least efficient. Experimental results indicated that ceria in mixtures was responsible for the enhanced polish process, while core materials enhanced a closer contact of nano-sized particles with the wafer. In general, the polish rates were higher with the larger contact area between the abrasives and the wafer. This mechanism was further verified by polishing oxide wafers on 3-M fixed abrasive pads, which have cylindrical structures with flat surfaces.

Type
Articles
Information
Journal of Materials Research , Volume 18 , Issue 10 , October 2003 , pp. 2323 - 2330
Copyright
Copyright © Materials Research Society 2003

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References

REFERENCES

1.Lu, Z., Lee, S-H., Babu, S.V., and Matijević, E., J. Colloid Interface Sci. 261, 55 (2003).CrossRefGoogle Scholar
2.Cook, L.M., J. Non-Cryst. Solids 120, 152 (1990).CrossRefGoogle Scholar
3.Kim, S-D., Hwang, I-S., Park, H-M., and Rhee, J-K., J. Vac. Sci. Technol. B 20, 918 (2002).CrossRefGoogle Scholar
4.Lee, J.W., Yoon, B.U., Hah, S., and Moon, J.T., in Chemical- Mechanical Polishing 2001-Advances and Future Challenges, edited by Babu, S.V., Cadien, K.C., Ryan, J.G., and Yano, H. (Mater. Res. Soc. Symp. Proc. 671, (2001), p. M5.3.1.Google Scholar
5.Srinivasan, R., Babu, S.V., America, W.G., and Her, Y-S., U.S. Patents 6 468 910 (October 2002), 6 491 843 (December 2002), and 6 544 862 (April 2002).Google Scholar
6.America, W.G., Srinivasan, R., and Babu, S.V., in Chemical- Mechanical Polishing 2001-Advances and Future Challenges, edited by Babu, S.V., Danyluk, S., Krishnan, M.I., and Tsujimura, M. (Mater. Res. Soc. Symp. Proc. 566, Warrendale, PA, 2000), p. 13.Google Scholar
7.Jindal, A., Hegde, S., and Babu, S.V., J. Electrochem. Soc. 150, G314 (2003).CrossRefGoogle Scholar
8.Hoshino, T., Kurata, Y., Terasaki, Y., and Susa, K., J. Non-Cryst. Solids 282, 129 (2001).CrossRefGoogle Scholar
9.Lee, J.W., Yoon, B.U., Han, S., and Moon, J.T., in Chemical- Mechanical Polishing 2001-Advances and Future Challenges, edited by Babu, S.V., Cadien, K.C., Ryan, J.G., and Yano, H. (Mater. Res. Soc. Symp. Proc. 671, Warrendale, PA, 2001), p. M5.3.1.Google Scholar
10.Lee, S.H., Lu, Z., Babu, S.V., and Matijević, E., J. Mater. Res. 17, 2744 (2002).CrossRefGoogle Scholar
11.Matijević, E. and Scheiner, P., J. Colloid Interface Sci. 63, 509 (1978).CrossRefGoogle Scholar
12.Sugimoto, T., Sakata, K., and Muramatsu, A., J. Colloid Interface Sci. 159, 372 (1993).CrossRefGoogle Scholar
13.Hamada, S. and Matijević, E., J. Colloid Interface Sci. 84, 274 (1981).CrossRefGoogle Scholar
14.Hamada, S. and Matijević, E., J. Chem. Soc., Faraday Trans. 1 78, 2147 (1982).CrossRefGoogle Scholar
15.Ozaki, M., Kratohvil, S., and Matijević, E., J. Colloid Interface Sci. 102, 146 (1984).CrossRefGoogle Scholar
16.Ohmori, M. and Matijević, E., J. Colloid Interface Sci. 160, 228 (1993).CrossRefGoogle Scholar
17.Gagliardi, J.J. and Vo, T., in Proceedings of the 16th VLSI Multilevel Interconnect Conference (1999), p. 223.Google Scholar
18.Mahajan, U., Bielmann, M., and Singh, R.K., in Chemical- Mechanical Polishing—Fundamentals and Challenges, edited by Babu, S.V., Danyluk, S., Krishnan, M.I., and Tsujimura, M. (Mater. Res. Soc. Proc. 566, Warrendale, PA, 2000), p. 27.Google Scholar
19.Basim, B.G., Adler, J.J., Mahajan, U., Singh, R.K., and Moudgil, B.M., J. Electrochem. Soc. 147, 3523 (2000).CrossRefGoogle Scholar