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Effect of bond valence on microwave dielectric properties of (Pb1−xCax)(Mg0.33Ta0.67)O3 ceramics

Published online by Cambridge University Press:  26 November 2012

Heung Soo Park ,
Ki Hyun Yoon  and
Eung Soo Kim
Heung Soo Park
Affiliation:
Department of Ceramic Engineering, Yonsei University, Seoul 120–749, Korea
Ki Hyun Yoon
Affiliation:
Department of Ceramic Engineering, Yonsei University, Seoul 120–749, Korea
Eung Soo Kim
Affiliation:
Department of Materials Engineering, Kyonggi University, Suwon 442–760, Korea
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Abstract

The relationship between the dielectric properties of the complex perovskite (Pb1−xCax)(Mg0.33Ta0.67)O3 ceramics, where 0.45 ≤ × ≤ 0.60, and the dielectric polarizability, related to bond valences of A-site ions, was investigated at microwave frequencies. As the Ca content (x) increased, the deviation of the observed dielectric polarizabilities, calculated by the Clausius–Mosotti equation from the theoretical values calculated by the additivity rule of dielectric polarizability, decreased from −3% to −0.69%. It was found that this deviation was related to the bond valence of the A-site. Smaller negative deviation corresponded to the cations with lower bond valence, and larger negative deviation corresponded to the cations with higher bond valence. Also, the temperature coefficient of resonant frequency (TCF) was affected by the bond valence of the A-site, and then TCF decreased with decreasing bond valence of the A-site in ABO3 perovskite compounds.

Type
Articles
Information
Journal of Materials Research , Volume 16 , Issue 3 , March 2001 , pp. 817 - 821
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

1.Kawasima, S., Nishida, M., Ueda, I., and Ouchi, H., J. Am. Ceram. Soc. 66, 421 (1983).CrossRefGoogle Scholar
2.Yoon, K.H., Chang, Y.H., Kim, W.S., Kim, J.B., and Kim, E.S., Jpn. J. Appl. Phys. 35, 5145 (1996).CrossRefGoogle Scholar
3.Colla, E.L., Reaney, I.M., and Setter, N., J. Appl. Phys. 74, 3414 (1993).CrossRefGoogle Scholar
4.Reaney, I.M., Colla, E.L., and Setter, N., Jpn. J. Appl. Phys. 33, 3984 (1994).CrossRefGoogle Scholar
5.Brown, I.D. and Altermatt, D., Acta Crystallogr. B 41, 192 (1985).CrossRefGoogle Scholar
6.Pauling, L., J. Am. Ceram. Soc. 69, 542 (1947).Google Scholar
7.Brese, N.B. and O’Keefe, M., Acta Crystallogr. B 47, 192 (1991).CrossRefGoogle Scholar
8.Swartz, S.L. and Shrout, T.R., Mater. Res. Bull. 17, 1245 (1982).CrossRefGoogle Scholar
9.Akbas, M.A. and Devies, P.K., J. Mater. Res. 12, 2617 (1997).CrossRefGoogle Scholar
10.Hakki, B.W. and Coleman, P.D., IRE Trans. Microwave Theory Tech. 8, 402 (1960).CrossRefGoogle Scholar
11.Nishikawa, T., Wakino, K., Tanaka, H., and Ishikawa, Y., IEEE, IEEE MTT-S Digest, 277 (1987).Google Scholar
12.Shannon, R.D., J. Appl. Phys. 73, 348 (1993).CrossRefGoogle Scholar
13.Kagata, H. and Kato, J., Jpn. J. Appl. Phys. 33, 5463 (1994).CrossRefGoogle Scholar
14.Moulson, A.J. and Herbert, J.M., Electroceramics (Chapman and Hall, London, New York, Tokyo, Melbourne, Madras, 1990),p. 79.Google Scholar
15.Shannon, R.D. and Rossman, G.R., Am. Miner. 77, 94 (1992).Google Scholar
16.Kato, J., Yokotani, Y., Nidhida, M., Kawashima, S., and Ouchi, H., Jpn. J. Appl. Phys. 24 [Suppl. 24–3], 90 (1985).CrossRefGoogle Scholar
17.Shannon, R.D., Acta Crystallogr. A 32, 751 (1976).CrossRefGoogle Scholar
18.Orgel, L.E., Discuss. Faraday Soc. 26, 138 (1958).CrossRefGoogle Scholar