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Characteristics of copper indium diselenide nanowires embedded in porous alumina templates

Published online by Cambridge University Press:  31 January 2011

Zhi Chen
Affiliation:
Center for Nanoscale Science and Engineering (CeNSE), Department of Electrical and Computer Engineering, University of Kentucky, Lexington, Kentucky 40506
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Abstract

Vertically aligned nanowire arrays of copper indium diselenide (CuInSe2 or CIS) of controllable diameter and length were fabricated by simultaneously electrodepositing Cu, In, and Se from an acid bath into the pores of anodized aluminum oxide (AAO) formed on top of an aluminum sheet. X-ray diffraction measurements revealed a preferential [112] orientation and the energy dispersive x-ray analysis (EDX) measurements indicated an overall composition close to stoichiometric CuInSe2. Ohmic contact to CIS was formed by depositing a 100 nm thick of gold layer on top, and thus a Schottky diode device of the Au/CIS nanowires/Al configuration was obtained. Analysis of the current–voltage characteristics of these devices yielded diode ideality factor and reverse saturate current density values slightly higher than those reported in the literature for bulk CIS/Al junctions. Capacitance–voltage measurements were performed on the diodes to get the estimates of space charge density and the junction potential.

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Copyright
Copyright © Materials Research Society 2010

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