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Broadband AlGaN/GaN MMIC amplifier

Published online by Cambridge University Press:  18 March 2011

Ali M. Darwish ,
H. Alfred Hung ,
Edward Viveiros  and
Amr A. Ibrahim
Ali M. Darwish*
Affiliation:
Army Research Laboratory, 2800 Powder Mill Road, Adelphi, MD 20783, USA. Phone:  + 202 2615 3057. American University in Cairo, AUC Avenue, Cairo 11835, Egypt.
H. Alfred Hung
Affiliation:
Army Research Laboratory, 2800 Powder Mill Road, Adelphi, MD 20783, USA. Phone:  + 202 2615 3057.
Edward Viveiros
Affiliation:
Army Research Laboratory, 2800 Powder Mill Road, Adelphi, MD 20783, USA. Phone:  + 202 2615 3057.
Amr A. Ibrahim
Affiliation:
American University in Cairo, AUC Avenue, Cairo 11835, Egypt.
*
Corresponding author: A. M. Darwish Email: darwish@alum.mit.edu
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Abstract

A broadband Monolithic Microwave Integrated Circuit (MMIC) amplifier, with 12 ± 2 dB gain across the 0.1–27 GHz band has been demonstrated using the AlGaN/GaN on SiC technology. The amplifier design employs a non-conventional, series-DC/RF-High Electron Mobility Transistor (HEMT) configuration. This configuration provides an alternative design to the conventional traveling-wave amplifier (TWA). It results in a smaller MMIC chip size, and extends amplifier gain to the low-frequency region. The amplifier MMIC utilizes four HEMT devices in series and could be biased at voltages up to 120 V.

Keywords

Wide-Bandgap Semiconductors Devices and TechnologiesReliability and Statistical AnalysisPower Amplifiers and Linearizers
Type
Research Papers
Information
International Journal of Microwave and Wireless Technologies , Volume 3 , Issue 4 , August 2011 , pp. 399 - 404
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2011

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