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Cryogenically-cooled, HEMT amplifiers and receivers in 1-50 GHz range: state-of-the-art

  • Marian W. Pospieszalski (a1)

Abstract

A review of the recent developments in the design, construction and performance of cryogenicallycoolable, high-electron-mobility transistor (HEMT, MODFET) amplifiers and their application in compact cryogenic receivers for radio astronomy applications is presented.

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References

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Petty, S.M. and Trowbridge, D.L., “Low-Noise Amplifiers,” in Deep Space Network • Radio Communications Instrument for Deep Space Exploration, JPL Publication 82-104. Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA, July 1983.
Pospieszalski, M.W., “A New Approach to Modeling of Noise Parameters of FETs and MODFETs and Their Frequency and Temperature Dependence,” National Radio Astronomy Observatory Electronics Division Internal Report No. 279, Charlottesville, VA, July 1988.
Pospieszalski, M.W., Gallego, J.D., and Lakatosh, W.J., ”Broadband, Low-Noise, Cryogenically-Coolable Amplifiers in 1 to 40 GHz Range,” in Proc. 1990 MTT-S Internal’l. Microwave Symp., pp. 12531256, Dallas, TX, May 1990.
Pospieszalski, M.W., “Modeling of Noise Parameters of MESFETs and MODFETs and Their Frequency and Temperature Dependence,” IEEE Trans, on Microwave Theory and Tech., vol. MTT-37, pp. 13401350, Sept. 1989.
Shell, J. and Neff, D., “A 32 GHz Reflected-Wave Maser Amplifier with Wide Instantaneous Bandwidth,” in Proc. 1988 IEEE MTT-S Internat’l. Microwave Symp., pp. 789792, New York, NY, June 1988.
Weinreb, S., Pospieszalski, M.W., and Norrod, R., “Cryogenic, HEMT, Low-Noise Receivers for 13 to 43 GHz Range,” Proc. 1988 IEEE MTT-S International Microwave Symp., pp. 945948, New York, NY, May 1988.
Weinreb, S., Harris, R. and Rothman, M., “Millimeter-Wave Noise Parameters of High Performance HEMTs at 300K and 17 K,” in Proc. 1989 IEEE MTT-S Internat’l. Microwave Symp., pp. 813816, Long Beach, CA, June 1989.

Cryogenically-cooled, HEMT amplifiers and receivers in 1-50 GHz range: state-of-the-art

  • Marian W. Pospieszalski (a1)

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