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X-ray diffraction study of a Si Σ13 symmetric tilt grain boundary

  • S. D. Rhead (a1), P. B. Howes (a1), M. Roy (a1), J. L. Rawle (a2), C. Nicklin (a2) and C. Norris (a2)...


We present an X-ray diffraction study of a semiconductor symmetric tilt grain boundary. The theory of crystal truncation rod scattering is extended to bicrystal interfaces and compared with experimental data measured at the Diamond Light Source.


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Budai, J., Bristowe, P. D. & Sass, S. L. 1983 The projected atomic structure of a large angle [001] Σ5 (θ = 36.9°) twist boundary in gold: diffraction analysis and theoretical predictions. Acta Metall. 31, 699712.
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Morris, J. R., Lu, Z.-Y., Ring, D. M., Xiang, J.-B., Ho, K.-M., Wang, C. Z. & Fu, C.-L. 1998 First-principles determination of the Σ = 13 {510} symmetric tilt boundary structure in silicon and germanium. Phys. Rev. B 58, 1124111245.
Sagalowicz, L. & Clark, W. A. T. 1995 Grain boundary dislocations in a Σ13 grain boundary in silicon I. Analysis of the possible grain boundary structures and dislocations. Philos. Mag. A 72, 545559.
Vlieg, E. 1998 A (2 + 3)-type surface diffractometer: mergence of the z-axis and (2 + 2)-type geometries. J. Appl. Crystallogr. 31, 198203.


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