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X-ray diffraction study of a Si Σ13 symmetric tilt grain boundary

  • S. D. Rhead (a1), P. B. Howes (a1), M. Roy (a1), J. L. Rawle (a2), C. Nicklin (a2) and C. Norris (a2)...

Abstract

We present an X-ray diffraction study of a semiconductor symmetric tilt grain boundary. The theory of crystal truncation rod scattering is extended to bicrystal interfaces and compared with experimental data measured at the Diamond Light Source.

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Corresponding author

Email address for correspondence:paul.howes@le.ac.uk

References

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Budai, J., Bristowe, P. D. & Sass, S. L. 1983 The projected atomic structure of a large angle [001] Σ5 (θ = 36.9°) twist boundary in gold: diffraction analysis and theoretical predictions. Acta Metall. 31, 699712.
Keating, P. N. 1966 Effect of invariance requirements on the elastic strain energy of crystals with application to the diamond structure. Phys. Rev. 145, 637644.
Morris, J. R., Lu, Z.-Y., Ring, D. M., Xiang, J.-B., Ho, K.-M., Wang, C. Z. & Fu, C.-L. 1998 First-principles determination of the Σ = 13 {510} symmetric tilt boundary structure in silicon and germanium. Phys. Rev. B 58, 1124111245.
Sagalowicz, L. & Clark, W. A. T. 1995 Grain boundary dislocations in a Σ13 grain boundary in silicon I. Analysis of the possible grain boundary structures and dislocations. Philos. Mag. A 72, 545559.
Vlieg, E. 1998 A (2 + 3)-type surface diffractometer: mergence of the z-axis and (2 + 2)-type geometries. J. Appl. Crystallogr. 31, 198203.

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