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Separation of Internal Strains and Lattice Distortion Caused by Oxygen Impurities in Aluminum Nitride Hot-Pressed Ceramics

Published online by Cambridge University Press:  06 March 2019

O. N. Grigoriev
Affiliation:
Department of Structural Ceramics Institute for Problems of Materials Science 3 Krzhizhanovskiy St., Kiev 252180, Ukraine
S. M. Kushnerenko
Affiliation:
Department of Structural Ceramics Institute for Problems of Materials Science 3 Krzhizhanovskiy St., Kiev 252180, Ukraine
K. A. Plotnikov
Affiliation:
Department of Structural Ceramics Institute for Problems of Materials Science 3 Krzhizhanovskiy St., Kiev 252180, Ukraine
W. Kreher
Affiliation:
Max-Plank-Society, Work Group of Heterogeneous Solid Mechanics, Engineering University of Dresden 3 Hallwachs St., D-01069, Dresden, Germany
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Extract

Recently aluminum nitride (A1N) has been intensively studied as a promising material for production of hybrid integrated circuit substrates because of its high thermal conductivity, high fjexural strength, and nontoxic nature. The estimated theoretical value of its thermal conductivity at room temperature is 320 W/mK, but it is strongly degraded by the introduction of oxygen. The measured values vary from 30 to 260 W/mK, Therefore, in production of this material the reduction of oxygen contamination is of paramount importance.

Type
V. Residual Stress, Crystallite Size and rms Strain Determination by Diffraction Methods
Copyright
Copyright © International Centre for Diffraction Data 1994

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