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Light Element Analysis Using Txrf

  • T. Fukuda (a1), T. Shoji (a1), M. Funabashi (a1), T. Utaka (a1), T. Arai (a1), K. Miyazaki (a2), A. Shimazaki (a2) and R. Wilson (a2) (a3)...

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Over the past few years there has been substantial progress in the TXRF analysis of heavy element surface contamination on silicon wafers. Further advances and improvements are desired in the analytical performance and hardware. Extension of the analytical range to include the light elements is particularly desirable.

In the case of light element analysis, sodium and aluminum impurities have been monitored in the IC production process. The increase of the sodium impurity in a silicon wafer gives rise to a decrease in the insulation in IC devices and the growth of the SiO2 film is disturbed by the prsence of aluminum impurity on the silicon wafer surface.

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1 Fukunda, T., Shoji, T., Funahashi, M., Utaka, T., Miyazaski, K. and Shimazaki, A.; The 30th meeting in Tukuba of the Discussion Group of X-ray Analysis in Japan Society for Analytical Chemistry (1994) in Japanese.
2 Streli, C., Wobrauscher, P. and Aiginger, H., Spectochimica Acta vol. 44B No. 5 (1989) 491-497, ibid. vol. 46B No. 10(1991) 1351 ∼ 1359 and ibid. vol. 48 B No. 2 (1993) 163 – 170
3 Streli, C., Worausclier, P. and Aiginger, H., Ladrsich, W. and Rieder, R.; Advances in X-ray Analysis vol. 37 (1994) 557 – 583
4 Freitag, K., Reus, U. and Fleischauer, J., Spectrochimica Acta. vol. 44B No. 5 (1989) 499 504

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