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High Resolution X-ray Diffraction Measurements of Strain Relaxed SiGe/Si Structures

  • P. M. Mooney (a1), J. L. Jordan-Sweet (a1), G. B. Stephenson (a1), F. K. LeGoues (a1) and J. O. Chu (a1)...

Abstract

Both double-crystal and triple-axis x-ray diffraction techniques have been used to study complex SiGe/Si structures. A novel method for measuring the nucleation activation energy of dislocations in strain relaxed SiGe/Si structures is presented to illustrate the usefulness of these techniques.

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High Resolution X-ray Diffraction Measurements of Strain Relaxed SiGe/Si Structures

  • P. M. Mooney (a1), J. L. Jordan-Sweet (a1), G. B. Stephenson (a1), F. K. LeGoues (a1) and J. O. Chu (a1)...

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