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High Resolution Measurement of Surface Misorientation in Single Crystal Wafers

Published online by Cambridge University Press:  06 March 2019

M. Fatemi
M. Fatemi*
Affiliation:
Electronics Science and Technology Division, U.S. Naval Research Laboratory, Washington, DC 20375-5000
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Abstract

A simple method for high-resolution measurement of surface misorientation in electronic materials is introduced. The technique combines laser optical alignment with double-crystal x-ray diffraction to yield a typical sensitivity of better than 1-2 arc sec. The technique can also be used to make corrections in spectrometric measurements in which commonly ignored rocking - curve errors may be significant.

Type
Research Article
Information
Advances in X-Ray Analysis , Volume 33: Thirty-Eighth Annual Conference on Applications of X-ray Analysis, July 31 - August 4, 1989 , 1989 , pp. 83 - 90
Copyright
Copyright © International Centre for Diffraction Data 1989

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References

1. Hsieh, K. C., Feng, M. S., and Stillman, G. E., Proc. Materials Research Soc., 116, 261 (1988).Google Scholar
2. Kikuta, S., Kohra, K., and Sugita, Y., Jap. J. Appl. Phys. 5 1047 (1966).Google Scholar
3. Fewster, P. F., J. Appl. Cryst. 15 275 (1982).Google Scholar
4. Fatemi, M., J. Cryst, Growth 96 316 (1989).Google Scholar