Hostname: page-component-76fb5796d-zzh7m Total loading time: 0 Render date: 2024-04-26T04:11:20.825Z Has data issue: false hasContentIssue false
  • English
  • Français

Characterization of Epitaxial High Tc Superconductors using a Parallel Beam X-Ray Diffractometer

Published online by Cambridge University Press:  06 March 2019

E. Houtman ,
T.W. Ryan ,
B. David  and
V. Doormann
E. Houtman
Affiliation:
Philips Analytical Almelo, The Netherlands
T.W. Ryan
Affiliation:
Philips Analytical Almelo, The Netherlands
B. David
Affiliation:
Philips Research Laboratories, Hamburg, FRG
V. Doormann
Affiliation:
Philips Research Laboratories, Hamburg, FRG
Get access

Abstract

Many analytical problems cannot be solved using a single XRD measurement. One example is the epitaxial growth of thin films of High Tc superconductors. To fully characterise such a sample it is necessary to study both the orientation (texture) and the phase composition of the layer.

Type
III. Thin-Film and Surface Characterization by XRD
Information
Advances in X-Ray Analysis , Volume 35 , Issue A: First Pacific-International Congress on X-ray Analytical Methods (PICXAM). Fortieth Annual Conference on Applications of X-ray Analysis, August 7-16, 1991 , 1991 , pp. 205 - 210
Copyright
Copyright © International Centre for Diffraction Data 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. He, Y.L, Wang, G.C., A. J. Drehman, Jin, H.S., J. Appl. Phys. 67, 7460 (1990)Google Scholar
2. Sizemore, J., Barton, R., Marshall, A., Bravmann, C.J., Naito, M., Char, K., IEEE Trans. Magnet, 25, 2245(1989)Google Scholar
3. Huang, T.C., Segmuller, A., Lee, W., Lee, V., Bullock, D., Karimi, R., Adv. X-ray Anal. 32, 269(1989)Google Scholar