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  1. Home
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  3. Photo-induced Defects in Semiconductors
  • Cited by 55
Publisher:
Cambridge University Press
Online publication date:
December 2009
Print publication year:
1996
Online ISBN:
9780511622533
DOI:
https://doi.org/10.1017/CBO9780511622533
Subjects:
Physics and Astronomy, Condensed Matter Physics, Nanoscience and Mesoscopic Physics, Engineering, Electronic, Optoelectronic Devices, and Nanotechnology
Series:
Cambridge Studies in Semiconductor Physics and Microelectronic Engineering (4)
Information

Book description

This is the first book to give a complete overview of the properties of deep-level, localized defects in semiconductors. Such comparatively long-lived (or metastable) defects exhibit complex interactions with the surrounding material, and can significantly affect the performance and stability of certain semiconductor devices. After an introductory discussion of metastable defects, the properties of DX and EL2 centres in III–V compounds are presented. Additional crystalline materials are also dealt with, before a detailed description is given of the properties and kinetics of photo-induced defects in amorphous semiconductors. The book closes with an examination of the effects of photo-induced defects in a range of practical applications. Throughout, unifying concepts and models are stressed, and the book will be of great use to graduate students and researchers interested in the physics and materials science of semiconductors.

Reviews

‘The authors give an excellent account of all the basic research undertaken in the area of defects in semiconductors particularly during the last 15 years. They assume that the reader has some basic knowledge of semiconductor physics. The text is presented in a very readable style and it contains over 100 figures. The book should be of direct interest to those scientists actively engaged in both fundamental and applied semiconductor physics. It is very readable and is of a high standard throughout.’

C. A. Bates Source: Contemporary Physics

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