Crossref Citations
This Book has been
cited by the following publications. This list is generated based on data provided by Crossref.
Nakaoka, T.
Saito, T.
Tatebayashi, J.
and
Arakawa, Y.
2004.
Size, shape, and strain dependence of thegfactor in self-assembled In(Ga)As quantum dots.
Physical Review B,
Vol. 70,
Issue. 23,
Bhattacharya, P.
Stiff-Roberts, A. D.
and
Chakrabarti, S.
2006.
Mid-infrared Semiconductor Optoelectronics.
Vol. 118,
Issue. ,
p.
487.
Win, Tin
and
Demidenko, Serge
2007.
Handbook of Computer Networks.
p.
745.
Rana, Farhan
2007.
Electron-hole generation and recombination rates for Coulomb scattering in graphene.
Physical Review B,
Vol. 76,
Issue. 15,
Cionca, C. N.
Walko, D. A.
Yacoby, Y.
Dorin, C.
Mirecki Millunchick, J.
and
Clarke, R.
2007.
Interfacial structure, bonding and composition of InAs and GaSb thin films determined using coherent Bragg rod analysis.
Physical Review B,
Vol. 75,
Issue. 11,
Arif, Ronald A.
Ee, Yik-Khoon
and
Tansu, Nelson
2007.
Enhancement of Radiative Efficiency of Nitride-Based LEDs via Staggered InGaN Quantum Wells Emitting at 420-500 nm.
p.
1.
Virgilio, Michele
and
Grosso, Giuseppe
2007.
Optical transitions between valley split subbands in biased Si quantum wells.
Physical Review B,
Vol. 75,
Issue. 23,
Duggen, Lars
Willatzen, Morten
and
Lassen, Benny
2008.
Crystal orientation effects on the piezoelectric field of strained zinc-blende quantum-well structures.
Physical Review B,
Vol. 78,
Issue. 20,
Huang, Bao-Ling
and
Kaviany, Massoud
2008.
Ab initioand molecular dynamics predictions for electron and phonon transport in bismuth telluride.
Physical Review B,
Vol. 77,
Issue. 12,
Arif, Ronald A
Zhao, Hongping
Ee, Yik-Khoon
and
Tansu, Nelson
2008.
Spontaneous Emission and Characteristics of Staggered InGaN Quantum-Well Light-Emitting Diodes.
IEEE Journal of Quantum Electronics,
Vol. 44,
Issue. 6,
p.
573.
Elizondo, S.L.
Zhao, F.
Kar, J.
Ma, J.
Smart, J.
Li, D.
Mukherjee, S.
and
Shi, Z.
2008.
Dielectric Charge Screening of Dislocations and Ionized Impurities in PbSe and MCT.
Journal of Electronic Materials,
Vol. 37,
Issue. 9,
p.
1411.
Sun, Jinjun
and
Goldys, Ewa M.
2008.
Linear Absorption and Molar Extinction Coefficients in Direct Semiconductor Quantum Dots.
The Journal of Physical Chemistry C,
Vol. 112,
Issue. 25,
p.
9261.
Özcan, S
Smoliner, J
Andrews, A M
Strasser, G
Dienel, T
Franke, R
and
Fritz, T
2008.
Ballistic electron attenuation length in titanylphthalocyanine films grown on GaAs.
Semiconductor Science and Technology,
Vol. 23,
Issue. 5,
p.
055008.
Virgilio, Michele
and
Grosso, Giuseppe
2008.
Quantum-confined Stark effect inGe∕SiGequantum wells: A tight-binding description.
Physical Review B,
Vol. 77,
Issue. 16,
Matthaus, G.
Hohmuth, R.
Voitsch, M.
Richter, W.
Riehemann, S.
Notni, G.
Nolte, S.
and
Tunnermann, A.
2008.
Micro lens coupled large area photoconductive switch for powerful THz emission.
p.
1.
Soroosh, Mohammad
2008.
Calculation of the Deposition Rate for Metal Organic Chemical Vapor Deposition (MOCVD).
p.
1.
Arif, Ronald A.
Ee, Yik‐Khoon
and
Tansu, Nelson
2008.
Nanostructure engineering of staggered InGaN quantum wells light emitting diodes emitting at 420–510 nm.
physica status solidi (a),
Vol. 205,
Issue. 1,
p.
96.
Santos, Ricardo A. T.
Alves, Fabio D. P.
Taranti, Christian G. R.
Faria, Lester A.
and
Quivy, Alain Andre
2009.
Quantum well infrared photodetector design using Transfer Matrix Method.
p.
316.
Stiff-Roberts, Adrienne D.
2009.
Quantum-dot infrared photodetectors: a review.
Journal of Nanophotonics,
Vol. 3,
Issue. 1,
p.
031607.
Ciasca, G.
De Seta, M.
Capellini, G.
Evangelisti, F.
Ortolani, M.
Virgilio, M.
Grosso, G.
Nucara, A.
and
Calvani, P.
2009.
Terahertz intersubband absorption and conduction band alignment inn-type Si/SiGe multiple quantum wells.
Physical Review B,
Vol. 79,
Issue. 8,