3 results
Optimization of Si:C Source and Drain Formed by Post-Epi Implant and Activation Anneal: Experimental and Theoretical Analysis of Dopant Diffusion and C Evolution in High-C Si:C Epi Layers
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1070 / 2008
- Published online by Cambridge University Press:
- 01 February 2011, 1070-E04-09
- Print publication:
- 2008
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- Article
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Low Temperature Si Direct Bonding by Plasma Activation
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- Journal:
- MRS Online Proceedings Library Archive / Volume 657 / 2000
- Published online by Cambridge University Press:
- 17 March 2011, EE9.2
- Print publication:
- 2000
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- Article
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Comparative Analysis of Strain and Stress in MBE and MOCVD grown GaN thin films on sapphire
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- Journal:
- MRS Online Proceedings Library Archive / Volume 482 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 447
- Print publication:
- 1997
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- Article
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