Hostname: page-component-848d4c4894-nmvwc Total loading time: 0 Render date: 2024-06-24T15:58:14.614Z Has data issue: false hasContentIssue false
  • English
  • Français

Comparative Analysis of Strain and Stress in MBE and MOCVD grown GaN thin films on sapphire

Published online by Cambridge University Press:  10 February 2011

Joachim Krüger ,
Sudhir G.S. ,
Dorina Corlatan ,
Yonah Cho ,
Viihwan Kim ,
Ralf Klockenbrink ,
Sergei Rouvimov ,
Zuzanna Liliental-Weber ,
Christian Kisielowski  and
Michael Rubin
...Show all authors
Joachim Krüger
Affiliation:
Department of Materials Science, University of California at Berkeley and Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
Sudhir G.S.
Affiliation:
Department of Materials Science, University of California at Berkeley and Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
Dorina Corlatan
Affiliation:
Department of Materials Science, University of California at Berkeley and Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
Yonah Cho
Affiliation:
Department of Materials Science, University of California at Berkeley and Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
Viihwan Kim
Affiliation:
Department of Materials Science, University of California at Berkeley and Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
Ralf Klockenbrink
Affiliation:
Department of Materials Science, University of California at Berkeley and Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
Sergei Rouvimov
Affiliation:
Department of Materials Science, University of California at Berkeley and Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
Zuzanna Liliental-Weber
Affiliation:
Department of Materials Science, University of California at Berkeley and Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
Christian Kisielowski
Affiliation:
Department of Materials Science, University of California at Berkeley and Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
Michael Rubin
Affiliation:
Department of Materials Science, University of California at Berkeley and Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
Eicke R. Weber
Affiliation:
Department of Materials Science, University of California at Berkeley and Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
Brian McDermott
Affiliation:
Rockwell International Science Center Thousand Oaks, CA 91360, USA
R. Pittman
Affiliation:
Rockwell International Science Center Thousand Oaks, CA 91360, USA
Edward R. Gertner
Affiliation:
Rockwell International Science Center Thousand Oaks, CA 91360, USA
Get access

Abstract

In this study, the causes of biaxial and hydrostatic stress components in epitaxially grown thin GaN films on sapphire are analyzed. It is observed that growth by Molecular Beam Epitaxy (MBE) and by Metal Organic Chemical Vapor Deposition (MOCVD) are governed by very similar physical principles. Differences in the absolute stress values are mainly due to the difference in growth temperature. It is argued that in the case of MOCVD growth the onset of plasticity for higher growth temperatures is responsible for a larger stress relaxation in the buffer layer. It is further found that either process can result in highly off-stoichiometric GaN layers, as manifested by the large variations in the a and c lattice parameters caused by intrinsic point defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 447
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Footnotes

*

Lawrence Berkeley Lab, m/s 2-200, 1 Cyclotron Road, (510) 486-5083(ph.)/-5530 (Fax), Joachim@WriteMe.Com

References

[1] Kahn, M. A., Bhattarai, A., Kuzina, J. N., Olsen, D. T., Appl. Phys. Lett. 63, 1214 (1993)Google Scholar
[2] Nakamura, S., Senoh, M., Iwasa, N., and Nagahama, S.; Appl. Phys. Lett. 67, 1868 (1995)Google Scholar
[3] Nakamura, S., et.al.; 2nd Int. Conf. on Nitride Semicond. (ICNS ‘97), Tokushima, JapanGoogle Scholar
[4] Kim, Y, et.al.; these proceedingsGoogle Scholar
[5] Fujii, H., et.al.; Mat. Res. Symp. Proc. MRS 449, 227 (1997)Google Scholar
[6] Kisielowski, C., et.al.; Proc. ICPS-23, Berlin 1996, Scheffler, M., Zimmermann, R. (eds.), World Scientific, Singapore 1996, p. 513 Google Scholar
[7] Ruvimov, S., et.al.; Appl. Phys. Lett. 69, 990 (1996)Google Scholar
[8] Suski, T., et.al.; Proc. ICPS, Berlin 1996, World Scientific, Singapore 1996, p. 2917 Google Scholar
[9] Sudhir, G. S., et.al.; these proceedingsGoogle Scholar
[10] Krüger, J., et.al.; Mat. Res. Symp. Proc. MRS 468, 299 (1997)Google Scholar
[11] Pakula, K., et.al.; Sol.Stat.Commun. 97,919 (1997)Google Scholar
[12] McDermott, B., et.al.; these proceedingsGoogle Scholar
[13] Anders, A., et.al.; Rev. Sci. Instrum. 67 (1996) 905 Google Scholar
[14] Krüger, J., et.al.; Proc. IEEE-SIMC-9, Toulouse, 1996, p. 89 Google Scholar
[15] Kisielowski, C., et.al.; Phys. Rev. BII 54, 1996, 17745 Google Scholar
[16] Kisielowski, C. in: Gallium Nitride (Pankove, J.I., ed.), Academic Press 1997, in pressGoogle Scholar
[17] Kaminska, M., et.al.; Appl. Phys. Lett. 54, 1881 (1989)Google Scholar
[18] Leszczynski, M., et.al.; Appl.Phys.Lett. 69,73 (1996)Google Scholar
[19] Yu.Melnik, V., et.al.; MRS Internet J. Nitride Semicond. Res. 2, 39 (1997)Google Scholar
[20] Lagerstedt, O. and Monemar, B.; Phys.Rev. B 19, 3064 (1979)Google Scholar