Shame leads to devaluation of the social self, and thus to a desire to improve self-esteem. Money, which is related to the notion of one’s ability, may help people demonstrate competence and gain self-esteem and respect from others. Based on the perspectives of feelings-as-information and threatened ego, we tested the hypothesis that a sense of shame heightens the desire for money, prompting self-interested behaviors as reflected by monetary donations and social value orientation. The results showed that subjects in the shame condition donated less money (Experiment 1) and exhibited more self-interested choices in the modified decomposed game (Experiment 2). The desire for money as reflected in overestimated coin sizes mediated the effect of shame on self-interested behavior. Our findings suggest that shame elicits the desire to acquire money to amend the threatened social self and improve self-esteem; however, it may induce a self-interested inclination that could harm social relationships.

The COVID-19 outbreak is ongoing in China. Here, Boltzmann function-based analyses reveal the potential total numbers of COVID-19 deaths: 3,260 (95% confidence interval [CI], 3187–3394) in China; 110 (95% CI, 109–112) in Hubei Province; 3,174 (95% CI, 3095–3270) outside Hubei; 2,550 (95% CI, 2494–2621) in Wuhan City; and 617 (95% CI, 607–632) outside Wuhan.

We investigated a cluster of postoperative febrile episodes and episodes of Acinetobacter baumannii bacteremia in obstetrics and gynecology wards after an electrical blackout and loss of the water supply. The use of patient-controlled analgesia was the only independent risk factor associated with postoperative fever, and A. baumannii isolates recovered from the blood of patients who had received patient-controlled analgesia were genetically related to an isolate recovered from the diluted morphine solution used for this procedure. After inappropriate preparation of the morphine solution was identified and stopped, the outbreak ended.

We found out the promising catalyst materials(NiPd). The NiPd not only has the low melting point but also has the Pd enhancing the surface diffusion at low temperatures(<500'c ). With the Pd film thickness increasing, we could control the CNT density and synthesize more aligned and uniform CNTs. We also obtained the better electrical properties including lower turn-on field (3.4 V/um) and higher current density (34.3 mA/cm2) for NiPd as catalyst. For the advantages described above, we believe that the difficulty of low temperature on FED can be overcome. Further, the large area field emission display might be fabricated in the future.

C60 films have been deposited using a partially ionized cluster beam deposition (PIBD) technique. The experimental results show that as Va. exceeds about 400 V almost all the C60 molecules fragmentate at collision with the substrate and the obtained films turn to be amorphous carbon layers at elevated Va, indicated by measurements of Raman spectra, X-ray diffraction, and ellipsometry.

Bombardment of silicon surfaces by low-energy nitrogen ions has been investigated as a possible process for growing films of silicon nitride at relatively low temperature(<500°C). Broad ion beams of energy 300–1200eV have been used to grow ultrathin silicon nitride films. Film thickness and chemical states are analyzed using ellipsometery, X-ray photoelectron spectroscopy (XPS), and Auger electron spectroscopy(AES). As a result, thicknesses dependence on ion energy, substrate temperature and implantation time have been investigated. The thicknesses of films obtained appear to increase with ion energy in the range from 300 to 1200eV, and with time of bombardment. The thicknesses are also observed to vary slightly with substrate temperature. The growth mechanism has also been investigated and discussed. The average activation energy of nitridation rates is about 3.5meV which indicates nonthermal process kinetics, compared to an activation energy of 0.2–0.6eV for thermal nitridation. AES results show that the atomic ratio [N]/[Si] is about 1.5, larger than that of pure Si3N4. All the analyses show that silicon nitride films of about 60Å thickness have been grown on silicon by low-energy ion beam nitridation.